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NDS9948
MOSFET 2P-CH 60V 2.3A 8-SOIC
- Fabricante
- Mfr. Parte #NDS9948
- Paquete 8-SOIC (0.154, 3.90mm Width)
- Hoja de datos NDS9948 DataSheet
- En stock4046
100% original & Nuevo
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Garantía de 365 días
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Especificaciones
| Supplier | onsemi |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | 2 P-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 60V |
| Current-ContinuousDrain(Id)@25°C | 2.3A |
| RdsOn(Max)@IdVgs | 250mOhm @ 2.3A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 13nC @ 10V |
| InputCapacitance(Ciss)(Max)@Vds | 394pF @ 30V |
| Power-Max | 900mW |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Descripción general
Description
Features
1. Architecture: It typically features a 32-bit architecture, allowing for efficient processing of complex algorithms.
2. Multiple Processing Cores: Often integrates multiple cores for parallel processing, enhancing performance and enabling real-time applications.
3. Memory Options: Supports various memory configurations, including SRAM and Flash, for flexible data handling.
4. Integrated Peripherals: Includes built-in peripherals like ADCs, DACs, and communication interfaces (I2C, SPI, UART) for versatile connectivity.
5. Power Efficiency: Designed for low power consumption, making it suitable for battery-operated devices.
6. Development Support: Supports development environments and tools for ease of programming and debugging.
7. Scalability: Can be scaled for different applications, from simple tasks to complex signal processing.
These features make the NDS9948 suitable for diverse applications in consumer electronics, automotive systems, and industrial controls.
Package
Pinout
The pin functions are as follows:
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Drain 1 (D1) - Output for the first N-channel MOSFET.
3. Source 1 (S1) - Source terminal for the first N-channel MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Drain 2 (D2) - Output for the second N-channel MOSFET.
6. Source 2 (S2) - Source terminal for the second N-channel MOSFET.
7. Drain 1/Source 2 (Common) - Often serves as a common connection point between the two MOSFETs.
8. Ground (GND) - Common ground for the device.
This configuration allows for efficient switching and power control in various electronic circuits. Always refer to the specific datasheet for detailed pin configurations and electrical characteristics.
Manufacturer
Application
Equivalent
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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