NCP5106BDR2G

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NCP5106BDR2G

IC GATE DRVR HALF-BRIDGE 8SOIC

  • Fabricante
  • Mfr. Parte #NCP5106BDR2G
  • Paquete SOIC-8
  • Hoja de datos
  • En stock2592

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Especificaciones

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
DrivenConfiguration Half-Bridge
ChannelType Independent
NumberofDrivers 2
GateType IGBT, N-Channel MOSFET
Voltage-Supply 10V ~ 20V
LogicVoltage-VILVIH 0.8V, 2.3V
Current-PeakOutput(SourceSink) 250mA, 500mA
InputType Non-Inverting
HighSideVoltage-Max(Bootstrap) 600 V
Rise/FallTime(Typ) 85ns, 35ns
OperatingTemperature -40°C ~ 125°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

Descripción general

Description

The NCP5106BDR2G is a high-performance gate driver IC manufactured by ON Semiconductor. It is designed for use in high-speed switching applications that require efficient driving of power MOSFETs and IGBTs. The device is characterized by its ability to deliver large peak current outputs, making it suitable for driving larger gate capacitances.
Key features of the NCP5106BDR2G include a wide operating voltage range, typically from 4.5V to 18V, and a capability to source and sink currents up to a few amps. It also offers protection features such as undervoltage lockout (UVLO) to prevent improper operation during low supply voltage conditions.
The driver operates with fast switching speeds, which helps in minimizing switching losses and improving overall system efficiency. It is commonly used in applications like power supplies, motor drives, and other power conversion systems. The compact design and high power handling of the NCP5106BDR2G make it a versatile component for engineers seeking reliable and efficient gate driving solutions.

Features

The NCP5106BDR2G is a high-voltage gate driver optimized for driving N-channel MOSFETs. Key features include:
1. High Voltage Capability: It can handle up to 600V, making it suitable for high-voltage applications.
2. Gate Drive Output: It provides high peak current capability, facilitating rapid charging and discharging of the MOSFET gate.
3. Bootstrap Circuitry: Integrated bootstrap diode supports high-side driver operation.
4. Under-Voltage Lockout (UVLO): Protects the device by preventing operation when supply voltage is insufficient.
5. Wide Operating Temperature Range: Suitable for diverse environments, typically ranging from -40°C to +125°C.
6. Low Power Consumption: Designed for efficient operation with minimal power loss.
7. Fast Switching: Offers high-speed operation essential for efficient power conversion.
8. Protection Features: Built-in protections enhance reliability, including thermal shutdown.
The NCP5106BDR2G is ideal for applications such as switch-mode power supplies, motor drivers, and other systems requiring high efficiency and rapid switching capabilities.

Package

The NCP5106BDR2G is typically available in an SOIC-8 package, which is a Small Outline Integrated Circuit with 8 pins. This package type is suitable for surface mounting on printed circuit boards, providing a compact form factor for electronic components.

Pinout

The NCP5106BDR2G is a high-voltage half-bridge gate driver IC designed for driving N-channel MOSFETs or IGBTs in a half-bridge configuration. It typically comes in an 8-pin SOIC (Small Outline Integrated Circuit) package. The pin functions are as follows:
1. VCC: Supply voltage pin.
2. IN: Input signal to control the high-side and low-side drivers.
3. GND: Ground pin.
4. HB: High-side driver positive supply rail.
5. HO: High-side driver output.
6. HS: High-side driver return connection.
7. LO: Low-side driver output.
8. VDD: Supply voltage for the logic.
These gate drivers are commonly used in power management applications, including motor drivers, power supplies, and DC-DC converters. The NCP5106BDR2G features low quiescent current, under-voltage lockout (UVLO), and high-speed operation, making it suitable for various high-performance applications.

Manufacturer

The NCP5106BDR2G is manufactured by ON Semiconductor, which is now known as onsemi. Onsemi is a semiconductor supplier company that specializes in power and signal management, logic, discrete, and custom devices for a variety of applications. These include automotive, industrial, cloud power, and internet of things (IoT), among others. The company focuses on advancing energy-efficient innovations, providing intelligent technology solutions that help build a better future.

Application

The NCP5106BDR2G is a high-performance driver designed for power MOSFETs and IGBTs, commonly used in applications such as switch-mode power supplies, motor control systems, and inverters. It ensures efficient switching and protection in high-frequency and high-power applications, making it suitable for industrial, automotive, and consumer electronics that require precise and reliable power management.

Equivalent

The NCP5106BDR2G is a high-voltage gate driver from ON Semiconductor. Equivalent products include:
1. IRS2117 from Infineon
2. TC4420 from Microchip Technology
3. UCC27714 from Texas Instruments
These alternatives offer similar functionality for driving MOSFETs and IGBTs in high-voltage applications. Always verify pin compatibility and electrical specifications before substituting.

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

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UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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