NAND128W3A2BN6E

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NAND128W3A2BN6E

IC FLASH 128MBIT PARALLEL 48TSOP

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Especificaciones

Part Status Obsolete
Base Product Number NAND128
DigiKey Programmable Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 128Mbit
Memory Organization 16M x 8
Memory Interface Parallel
Write Cycle Time - Word, Page 50ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 48-TSOP
Packaging Tray
Access Time 50 ns

Descripción general

Description

The NAND128W3A2BN6E is a high-performance NAND flash memory chip manufactured by Micron Technology. It features a storage capacity of 128 gigabits (Gb), making it suitable for a wide range of applications, including mobile devices, consumer electronics, and industrial applications. This chip is organized in a way that allows for efficient data storage and retrieval, utilizing a page size of 8KB and a block size of 128KB.
Key features include a fast read speed, typically around 200 MB/s, and a write speed that can vary based on the operational conditions. The NAND128W3A2BN6E utilizes advanced 3D NAND technology, enhancing reliability and endurance, with improved performance in terms of power efficiency and lower latency. It supports multiple interfaces, including ONFI (Open NAND Flash Interface), making it compatible with various controllers.
This chip is particularly valuable in applications requiring high-density storage, such as SSDs, and is designed to meet the demands of modern data-intensive usage scenarios.

Features

The NAND128W3A2BN6E is a 128Mb (16MB) NAND Flash memory chip from Micron Technology, designed for a variety of applications including mobile devices, consumer electronics, and embedded systems. Key features include:
1. Interface: Supports the ONFI (Open NAND Flash Interface) standard for easy integration.
2. Density: Offers 128Mb capacity, suitable for compact storage needs.
3. Page Size: Typically features a page size of 2KB with multiple pages per block, optimizing read and write operations.
4. Block Size: Contains multiple 128KB blocks for efficient data management.
5. Endurance: Designed for high endurance, often rated for 3,000 to 10,000 program/erase cycles.
6. Data Retention: Maintains data integrity for up to 10 years under appropriate conditions.
7. Low Power: Engineered for low power consumption, making it suitable for battery-operated devices.
8. Temperature Range: Operates within a wide temperature range, ensuring reliability in various environments.
These features make the NAND128W3A2BN6E a versatile choice for modern memory storage solutions.

Package

The NAND128W3A2BN6E is packaged in a 48-ball VFBGA (Very Fine Ball Grid Array) format. This compact package type is designed for high-density applications, providing efficient space utilization and enhanced thermal performance for NAND flash memory.

Pinout

The NAND128W3A2BN6E is a NAND flash memory device from Micron Technology. It features a total of 48 pins. The primary functions of these pins include:
1. Data Pins (DQ0-DQ7): 8 pins for bi-directional data transfer.
2. Command Input (CLE): 1 pin for command latch enable.
3. Address Input (ALE): 1 pin for address latch enable.
4. Chip Enable (CE): 1 pin to select the chip.
5. Write Protect (WP): 1 pin to protect against accidental writes.
6. Ready/Busy (RY/BY): 1 pin to indicate the device status.
7. Reset (RESET): 1 pin to reset the device.
8. Vcc and Vss: Power supply and ground pins.
9. Other pins: Some are used for various control signals.
This device is typically used in applications requiring non-volatile storage, such as mobile devices, SSDs, and other embedded systems.

Manufacturer

The manufacturer of the NAND128W3A2BN6E is Micron Technology, Inc. Micron is an American multinational corporation that specializes in the production of memory and storage solutions, including DRAM, NAND flash memory, and other semiconductor products. Founded in 1978 and headquartered in Boise, Idaho, Micron is a key player in the global semiconductor industry, providing components for a range of applications, from consumer electronics to enterprise storage solutions. The company is known for its innovations in memory technology and plays a significant role in the development of advanced memory products utilized in various devices, including smartphones, computers, and data centers.

Application

The NAND128W3A2BN6E is a 128Mb NAND Flash memory chip, primarily used in applications such as mobile devices, consumer electronics, SSDs, and embedded systems. It serves for data storage in smartphones, tablets, and smart appliances, providing high-density storage solutions with fast read/write capabilities, making it suitable for multimedia applications and file storage.

Equivalent

The NAND128W3A2BN6E chip, a 128Mb NAND Flash memory, has several equivalent products from various manufacturers. Alternatives include the Micron MT29F128G08CFAAA, Samsung K9GAG08U0M, and Winbond W25N128JW. Always verify compatibility based on specifications like voltage, speed, and pin configuration before substitution.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria