MT62F1G64D8CH-031 WT:B

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MT62F1G64D8CH-031 WT:B

DRAM LPDDR5 64G 1GX64 FBGA 8DP

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  • Mfr. Parte #MT62F1G64D8CH-031 WT:B
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  • En stock7737

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Especificaciones

Standard Pack Qty 1190

Descripción general

Description

The MT62F1G64D8CH-031 WT:B is a dynamic random-access memory (DRAM) chip produced by Micron Technology. Specifically, it is a 1 Gb (gigabit) DDR3 SDRAM (double data rate synchronous dynamic random-access memory) device, designed for high-performance computing applications. This chip features a 64-bit data bus and operates with a supply voltage of 1.5V, making it suitable for energy-efficient designs.
Key features include a fast data transfer rate, enhanced bandwidth, and support for various operating frequencies. The chip is typically used in applications such as smartphones, tablets, and other mobile devices, as well as in consumer electronics and computer systems.
The designation "WT:B" indicates its packaging and manufacturing details, which can influence thermal performance and compatibility with different circuit designs. Overall, the MT62F1G64D8CH-031 WT:B is designed to meet the demands of modern electronic applications requiring reliable and efficient memory solutions.

Features

The MT62F1G64D8CH-031 WT:B is a 1 Gigabit (1Gb) DRAM memory chip from Micron Technology. It features:
1. Type: DDR2 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory).
2. Organization: 64 Meg x 8 bits.
3. Voltage: Operates at a voltage of 1.8V, which is standard for DDR2 devices.
4. Speed: Supports data rates up to 400 MT/s (mega-transfers per second).
5. Package: Typically available in a small form factor, such as a 54-ball FBGA (Fine Ball Grid Array).
6. Latency: Low latency, optimized for performance in various applications.
7. Applications: Commonly used in mobile devices, embedded systems, and various consumer electronics.
This chip is designed for reliability and efficiency in data processing tasks, making it suitable for a wide range of electronic applications.

Package

The MT62F1G64D8CH-031 WT:B is packaged in a TSOP (Thin Small Outline Package) type. This package type is commonly used for memory devices, providing a compact form factor suitable for integration in various electronic applications.

Pinout

The MT62F1G64D8CH-031 WT:B is a 1 Gb (gigabit) DDR3 SDRAM device produced by Micron Technology. It features a 64-bit data width and operates at a voltage of 1.5V.
This memory chip has a total of 66 pins in a standard BGA (Ball Grid Array) package. The main functions of these pins include:
- Data pins (DQ0-DQ63): For data input/output.
- Address pins (A0-A12): To select memory locations.
- Chip Select (CS): To enable or disable the chip.
- Write Enable (WE): To control write operations.
- Read Enable (RE): To control read operations.
- Clock (CK, CK#): To synchronize data transfers.
- Ba (Bank Address): For bank selection.
- VDD/VSS: Power supply and ground connections.
This chip is commonly used in various applications, including mobile devices and consumer electronics, due to its high speed and efficiency.

Manufacturer

The manufacturer of the MT62F1G64D8CH-031 WT:B is Micron Technology, Inc. Micron is a global leader in the semiconductor industry, specializing in memory and storage solutions. The company produces a variety of products, including DRAM, NAND flash memory, and other memory technologies, serving various markets such as computing, mobile, consumer electronics, and automotive applications. Founded in 1978 and headquartered in Boise, Idaho, Micron is recognized for its innovation and commitment to advancing memory technology.

Application

The MT62F1G64D8CH-031 WT:B is a 1Gb DDR3 SDRAM memory chip commonly used in various applications, including consumer electronics, mobile devices, and computing systems. Its primary areas of application include smartphones, tablets, laptops, and embedded systems, where high-speed data processing and efficient power consumption are essential.

Equivalent

The MT62F1G64D8CH-031 WT:B is a mobile DRAM chip from Micron, typically found in mobile devices. Equivalent products include similar DDR3/DDR3L SDRAM chips from manufacturers like Samsung (K3SG2G30M), Hynix (H5TQ1G63AFR), and Nanya (NT5TU32M16HG-3C). Ensure to check specifications such as density, voltage, and timing for compatibility.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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3. Transferencia bancaria

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