MT53E2G32D4DE-046 WT:C

Las imágenes son solo para referencia

MT53E2G32D4DE-046 WT:C

DRAM LPDDR4 64Gbit 32 200/264 TFBGA 4 WT

  • Fabricante
  • Mfr. Parte #MT53E2G32D4DE-046 WT:C
  • Paquete
  • Hoja de datos
  • En stock9319

100% original & Nuevo

24 horas listos para el envío

Garantía de 365 días

RFQ y Obtenga más descuentos

Especificaciones

Packaging Tray
Standard Pack Qty 1360

Descripción general

Description

The MT53E2G32D4DE-046 WT:C is a type of DRAM (Dynamic Random Access Memory) manufactured by Micron Technology, specifically designed for mobile applications. It features a 2GB capacity in a 32-bit wide configuration, leveraging the DDR2 (Double Data Rate 2) technology, which offers improved performance and reduced power consumption compared to earlier generations. The "046" in the part number typically indicates the speed grade or timing specifications, while "WT" denotes the specific package type or grade.
This memory module is commonly used in smartphones, tablets, and other portable devices where efficiency and space-saving are critical. The "C" suffix may indicate a specific revision or manufacturing characteristic. Overall, this component is essential for enhancing the performance of mobile devices by providing fast and reliable memory access.

Features

The MT53E2G32D4DE-046 WT:C is a DDR4 SDRAM memory chip manufactured by Micron Technology. It features a configuration of 2 gigabits (Gb) of density per chip, organized in a 32-bit wide data bus. This memory module operates at a data rate of 1,600 MT/s (megatransfers per second) and has a voltage supply of 1.2V, which enhances power efficiency compared to previous DDR generations.
Key features include:
- Density: 2Gb per chip
- Data Rate: 1.6 Gbps
- Data Width: 32 bits
- Voltage: 1.2V
- Package: Typically in a FBGA (Fine Pitch Ball Grid Array) package for improved thermal and electrical performance.
It is designed for use in a variety of applications, including computing, networking, and telecommunications, where high performance and energy efficiency are critical. The "WT:C" designation indicates certain specific characteristics or configurations in production.

Package

The MT53E2G32D4DE-046 WT:C is a DRAM memory device from Micron Technology. It typically comes in a 78-ball FBGA (Fine Ball Grid Array) package type, designed for mobile applications. The package is compact and optimized for high performance and efficiency in space-constrained environments.

Pinout

The MT53E2G32D4DE-046 WT:C is a DRAM memory component from Micron's DDR4 SDRAM family. It typically features a 96-ball BGA (Ball Grid Array) package, with a pin count of 96.
The primary functions of this memory chip include providing high-speed data storage and retrieval for various computing applications, including servers and embedded systems. It supports a data rate of 1600 MT/s (megatransfers per second) and operates at a voltage of 1.2V, which helps in reducing power consumption.
The device is designed to operate in various configurations, such as x4 or x8 data widths, making it versatile for different memory needs. Its architecture is optimized for high performance and bandwidth, ensuring efficient data handling for modern applications.

Manufacturer

The MT53E2G32D4DE-046 WT:C is manufactured by Micron Technology, Inc. Micron is a leading American company that specializes in memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron produces a wide range of products, including DRAM, NAND flash memory, and storage technologies for various applications in computing, mobile devices, and data centers. The company's focus on innovation and technology positions it as a significant player in the semiconductor industry, catering to both consumer and enterprise markets. Micron's products are essential for enhancing performance and efficiency in electronic devices, making it a key supplier in the global tech landscape.

Application

The MT53E2G32D4DE-046 WT:C is a DRAM memory component primarily used in mobile devices, such as smartphones and tablets, as well as in automotive applications, consumer electronics, and industrial devices. Its low power consumption and high performance make it suitable for applications requiring efficient memory solutions, including gaming, multimedia processing, and high-speed data transfer.

Equivalent

The MT53E2G32D4DE-046 WT:C chip is a 2Gb DDR3 SDRAM memory chip. Equivalent products typically include other 2Gb DDR3 SDRAMs from various manufacturers, such as:
1. Micron MT53E2G32D4DE-046
2. Samsung K4B2G1646D
3. Hynix H5TQ2G83EFR
4. Nanya NT2GT64B2HB
Check specifications for voltage, speed, and package type to ensure compatibility.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria