MT53E1G32D2NP-046 WT:B

Las imágenes son solo para referencia

MT53E1G32D2NP-046 WT:B

DRAM LPDDR4 32Gbit 32 200/264 WFBGA 2 WT

  • Fabricante
  • Mfr. Parte #MT53E1G32D2NP-046 WT:B
  • Paquete
  • Hoja de datos
  • En stock29940

100% original & Nuevo

24 horas listos para el envío

Garantía de 365 días

RFQ y Obtenga más descuentos

Especificaciones

Packaging Tray
Standard Pack Qty 1360

Descripción general

Description

The MT53E1G32D2NP-046 WT:B is a specific model of DRAM (Dynamic Random-Access Memory) produced by Micron Technology. It falls under the category of Mobile DRAM, designed primarily for mobile devices such as smartphones, tablets, and laptops, where low power consumption and high performance are critical.
Key features include a memory capacity of 1GB, a data width of 32 bits, and it operates at a frequency of 1066 MT/s (Megatransfers per second). The designation "-046" typically indicates the manufacturing process or specific configuration, while "WT:B" may refer to the temperature range or specific testing requirements.
This DRAM component is ideal for applications requiring efficient memory solutions, benefiting from Micron's advanced memory technology. Overall, the MT53E1G32D2NP-046 WT:B is engineered for optimal performance and reliability in portable devices.

Features

The MT53E1G32D2NP-046 WT:B is a DDR3 SDRAM memory chip manufactured by Micron Technology. Here are its key features:
1. Capacity: 1 Gigabit (1G x 32).
2. Type: DDR3 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory).
3. Data Rate: Operates at a data rate of up to 1066 MT/s.
4. Organization: 1G x 32 configuration, allowing for high bandwidth and efficient data processing.
5. Operating Voltage: Typically operates at 1.5V, offering improved power efficiency compared to earlier DDR generations.
6. Package Type: Usually comes in a FBGA (Fine Ball Grid Array) package, facilitating compact designs.
7. Temperature Range: Supports standard commercial temperature ranges, suitable for various applications.
This memory chip is often used in consumer electronics, networking hardware, and other applications requiring reliable, high-performance memory solutions.

Package

The MT53E1G32D2NP-046 WT:B is a DRAM component packaged in a small FBGA (Fine Ball Grid Array) format, specifically designed for mobile and computing applications to provide high-density memory solutions.

Pinout

The MT53E1G32D2NP-046 WT:B is a 1GB DDR3 SDRAM memory device, specifically a DDR3L SDRAM. It typically features a 78-pin ball grid array (BGA) package.
The primary functions of the pins include:
1. Data Pins: For data input/output, typically 32 data bits wide.
2. Address Pins: To select memory addresses.
3. Control Pins: For controlling memory operations, including chip select (CS), write enable (WE), and clock (CK).
4. Power Pins: For supplying power (VDD, VSS).
5. Ball and Signal Types: Specific pins for differential clock signals, write/read commands, and mode registers.
This chip operates at a voltage of 1.35V (DDR3L) and is designed for low power consumption while providing high performance suitable for various applications. For detailed functionality, please refer to the specific datasheet from Micron Technology.

Manufacturer

The MT53E1G32D2NP-046 WT:B is manufactured by Micron Technology, Inc. Micron is a global leader in the semiconductor industry, specializing in memory and storage solutions, including DRAM, NAND flash memory, and solid-state drives (SSDs). Founded in 1978 and headquartered in Boise, Idaho, Micron serves a diverse array of markets, including computing, mobile, automotive, and enterprise applications. The company is known for its innovation and technological advancements in memory products, contributing significantly to various sectors such as consumer electronics, data centers, and industrial applications. Micron is publicly traded and plays a crucial role in the development of memory technologies that enable modern computing and data storage solutions.

Application

The MT53E1G32D2NP-046 WT:B is a DRAM memory chip from Micron Technology, typically used in mobile devices, automotive applications, and IoT devices. Its low power consumption and high-speed performance make it suitable for applications requiring efficient data processing, such as smartphones, tablets, and embedded systems. Additionally, it can be utilized in edge computing scenarios where space and power efficiency are critical.

Equivalent

The MT53E1G32D2NP-046 WT:B is a DRAM memory chip from Micron Technology, specifically a DDR4 SDRAM. Equivalent products may include other DDR4 memory chips with similar specifications, such as those from Samsung (K4AAG085WB), SK Hynix (H5AN8G6NCJR), or other Micron models like MT53E1G32D2P. Ensure compatibility with the specific application and configuration requirements, including speed, capacity, and organization.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

Similar