MT51J256M32HF-80:B

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MT51J256M32HF-80:B

IC RAM 8GBIT PAR 2GHZ 170FBGA

  • Fabricante
  • Mfr. Parte #MT51J256M32HF-80:B
  • Paquete 170-FBGA (12x14)
  • Hoja de datos
  • En stock7900

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Especificaciones

Package Tray
ProductStatus Obsolete
MemoryType Volatile
MemoryFormat RAM
Technology SGRAM - GDDR5
MemorySize 8Gb (256M x 32)
MemoryInterface Parallel
ClockFrequency 2 GHz
Voltage-Supply 1.31V ~ 1.39V, 1.46V ~ 1.55V
OperatingTemperature 0°C ~ 95°C (TC)
MountingType Surface Mount
Package/Case 170-TFBGA

Descripción general

Description

The MT51J256M32HF-80:B is a high-performance DDR3 SDRAM memory chip from Micron Technology. It features a 256 Meg x 32-bit organization, providing a total capacity of 8 Gigabits. The "80" in its name indicates a data rate of 800 MT/s (million transfers per second), which allows for efficient data processing and bandwidth.
This chip operates at a supply voltage of 1.5V, making it energy-efficient, suitable for various applications including laptops, desktops, and servers. It supports multiple modes of operation, such as burst read/write, and features advanced functions like on-die termination (ODT) for improved signal integrity.
The design is optimized for high-speed operation and reliability, making it ideal for performance-critical systems. The "B" suffix often signifies a specific package or revision related to the product's versioning.
Overall, the MT51J256M32HF-80:B is a reliable choice for modern computing needs, balancing speed, capacity, and power efficiency.

Features

The MT51J256M32HF-80:B is a 256 Megabit (32 Megabyte) DRAM memory chip produced by Micron Technology. It is organized as 8 bits x 32, making it suitable for various applications requiring high-density memory. Key features include:
- Memory Type: DDR3 SDRAM
- Density: 256 Mb (32 MB)
- Data Rate: Supports speeds up to 800 MT/s
- Operating Voltage: 1.5V
- Package Type: Available in a 78-ball BGA (Ball Grid Array) package
- Access Time: Low latency with enhanced performance for applications
- Temperature Range: Typically operates in industrial conditions for reliability
- Interface: Dedicated to high-performance applications in computing and networking
This memory chip is designed for use in consumer electronics, computers, and embedded systems, providing efficient data handling and storage solutions.

Package

The MT51J256M32HF-80:B is packaged in a 96-ball FBGA (Fine Ball Grid Array) format. This compact package design allows for efficient space utilization on printed circuit boards while providing reliable electrical performance.

Pinout

The MT51J256M32HF-80:B is a DDR3 SDRAM memory chip with a pin count of 78. It operates at a clock speed of 800 MT/s and has a density of 256 Meg x 32 bits, making it a 2GB DRAM component.
The primary functions of this chip include providing high-speed data storage and retrieval for a variety of applications, such as computers, networking equipment, and other electronic devices. It features a wide data bus, enabling efficient data transfer rates to meet the demands of modern applications. Additionally, it supports features like burst mode and is designed for low power consumption, making it suitable for mobile and embedded systems.

Manufacturer

The manufacturer of the MT51J256M32HF-80:B is Micron Technology, Inc. Micron is an American multinational corporation specializing in the production of memory and storage solutions, including DRAM, NAND flash memory, and other semiconductor products. Founded in 1978 and headquartered in Boise, Idaho, Micron is a key player in the global semiconductor industry. The company primarily serves markets such as consumer electronics, computing, automotive, and mobile devices. Micron is known for its innovation and technological advancements, contributing significantly to the development of memory technologies.

Application

The MT51J256M32HF-80:B is a 256Mb DDR3 SDRAM memory chip commonly used in applications such as mobile devices, consumer electronics, laptops, and tablets. It features high-speed data processing and is suitable for graphics-intensive tasks, data buffering, and caching in various computing devices. Its low power consumption makes it ideal for battery-operated applications.

Equivalent

The MT51J256M32HF-80:B chip is a DDR3 SDRAM with specific characteristics. Equivalent products include:
1. Hynix H5TQ2G83EFR - Similar density and speed.
2. Samsung K4B4G083PB - Compatible DDR3 with similar specs.
3. Micron MT41K256M16HA - Comparable performance and capacity.
Always verify compatibility based on your system requirements.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

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