Las imágenes son solo para referencia
MT47H64M8CF-25E:G
IC DRAM 512MBIT PARALLEL 60FBGA
- Fabricante
- Mfr. Parte #MT47H64M8CF-25E:G
- Paquete 60-TFBGA
- Hoja de datos
- En stock4436
100% original & Nuevo
24 horas listos para el envío
Garantía de 365 días
RFQ y Obtenga más descuentos
Especificaciones
| Supplier | Micron Technology Inc. |
| Package | Tray |
| ProductStatus | Obsolete |
| MemoryType | Volatile |
| MemoryFormat | DRAM |
| Technology | SDRAM - DDR2 |
| MemorySize | 512Mb (64M x 8) |
| MemoryInterface | Parallel |
| ClockFrequency | 400 MHz |
| WriteCycleTime-WordPage | 15ns |
| AccessTime | 400 ps |
| Voltage-Supply | 1.7V ~ 1.9V |
| OperatingTemperature | 0°C ~ 85°C (TC) |
| MountingType | Surface Mount |
| Package/Case | 60-TFBGA |
Descripción general
Description
- Organization: 64M x 8 (64 megawords x 8 bits) → 512 Mb total per die.
- Package: RoHS-compliant (G suffix), typically in a FBGA/related package.
- Type: DDR3L SDRAM (low-voltage DDR3), requires a memory controller.
- Speed/voltage: -25E denotes a specific Micron speed grade; operation typically around ~1.35 V (DDR3L) with data rates in the ~1066–1333 MT/s range depending on the grade. Exact timings and voltage per datasheet.
- Use: Not a standalone module; used as one memory device in a multi-device DIMM/subsystem controlled by a memory controller, forming a wider 64-bit bus across devices.
For exact electrical specs, timing, package details, and operating conditions, consult the Micron MT47H64M8CF-25E:G datasheet.
Features
- Capacity/organization: 512 Mb total (64M x 8)
- Interface: DDR2 SDRAM, unbuffered, synchronous
- Data width: 8-bit wide data bus
- Voltage: 1.8V VDD/VDDQ
- Architecture: 4-bank DDR2 with 4n prefetch
- Speed: supports up to DDR2-800 (depends on grade, timing, and operating conditions)
- Packaging: Pb-free RoHS-compliant (G suffix), typically in an FBGA package
- Refresh/operation: standard DDR2 auto-refresh/self-refresh support
- Applications: suitable for mobile/compact systems and memory modules requiring 512 Mb DDR2 RAM
Package
Pinout
- Function: 64M × 8-bit Mobile DDR2 SDRAM memory device with an 8-bit data bus; synchronous DDR2 memory supporting standard address, bank, command, data (DQ/DQS) lines for use as system RAM in mobile devices.
Manufacturer
- What kind of company: A global American semiconductor company that designs and manufactures memory and storage products (e.g., DRAM, NAND flash).
Application
Equivalent
- package code (FBGA variant)
- voltage (1.35V or 1.5V)
- speed grade (e.g., 1333/1066 MT/s)
- any timing/temperature specs
With these, I can give precise cross-references (e.g., SK hynix, Samsung equivalents).
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
Similar
-
MX25R8035FM1IL0
Macronix
-
MX25V1635FZNI
Macronix
-
MX25V1635FZNQ03
Macronix
-
MX66U1G45GXDI00
Macronix
-
MX25V5126FM1I
Macronix
-
MX25V4035FZUI
Macronix
-
MX25V2033FM1I
Macronix
-
MX25V16066M2I02
Macronix
-
MX30LF2G28AD-TI
Macronix
-
MX29GL512FHXFI-11..
Macronix
-
MX25U3232FZBI02
Macronix
-
MX25L6433FM2I-08G
Macronix