MT47H64M16HW-3:H

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MT47H64M16HW-3:H

IC DRAM 1GBIT PARALLEL 84FBGA

  • Fabricante
  • Mfr. Parte #MT47H64M16HW-3:H
  • Paquete 84-TFBGA
  • Hoja de datos
  • En stock4347

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Especificaciones

Package Bulk
ProductStatus Obsolete
MemoryType Volatile
MemoryFormat DRAM
Technology SDRAM - DDR2
MemorySize 1Gb (64M x 16)
MemoryInterface Parallel
ClockFrequency 333 MHz
WriteCycleTime-WordPage 15ns
AccessTime 450 ps
Voltage-Supply 1.7V ~ 1.9V
OperatingTemperature 0°C ~ 85°C (TC)
MountingType Surface Mount
Package/Case 84-TFBGA

Descripción general

Description

The MT47H64M16HW-3:H is a DRAM (Dynamic Random Access Memory) component produced by Micron Technology. It is a 1Gb DDR3 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) device organized as 64 Meg x 16 bits. This chip operates at a voltage of 1.5V, making it suitable for energy-efficient applications.
Key features include a data transfer rate of up to 1600 MT/s (megatransfers per second), and it supports various configurations for memory modules, including both x16 and x8 data width options. Its low power consumption and high speed make it ideal for use in laptops, servers, and other electronic devices requiring efficient memory solutions.
The “-3:H” designation indicates specific characteristics related to the memory speed grade and the lead-free packaging, suitable for RoHS-compliant applications. Overall, the MT47H64M16HW-3:H is a versatile and reliable choice for modern memory architecture.

Features

The MT47H64M16HW-3:H is a DRAM (dynamic random-access memory) chip from Micron Technology. Key features include:
1. Type: DDR3 SDRAM.
2. Density: 1 Gigabit (Gb) capacity, composed of 64 Meg x 16 bits.
3. Organization: 8 banks for efficient data handling.
4. Voltage: Operates at a low voltage of 1.5V, enhancing power efficiency.
5. Speed Grade: Supports data rates up to 1600 MT/s.
6. Package: Available in a compact FBGA (Fine Ball Grid Array) package.
7. Temperature Range: Industrial temperature range, suitable for various applications.
8. Functionality: Includes features like self-refresh and low-power mode for energy conservation.
9. Applications: Commonly used in computers, servers, and other embedded systems.
Overall, the MT47H64M16HW-3:H is designed for high-performance applications requiring efficient power consumption and reliable data storage.

Package

The MT47H64M16HW-3:H is packaged in a 78-ball FBGAs (Fine Ball Grid Array) format. It is designed for use in mobile applications, providing high-density DRAM in a compact package.

Pinout

The MT47H64M16HW-3:H is a DDR3 SDRAM memory chip produced by Micron Technology. It features a 78-ball FBGA (Fine Ball Grid Array) package.
Pin Count: 78 balls
Function:
- The chip is organized as 64 Meg x 16, providing a total of 1GB capacity.
- It operates at a voltage of 1.5V and supports data rates of up to 1600 MT/s.
- Key functions include data input/output, address input, control signals (like chip select, write enable, and clock), and power supply connections.
- It is commonly used in various applications, including computing, networking, and consumer electronics, for high-speed data storage and retrieval.
The chip is suitable for applications requiring efficient memory performance and low power consumption.

Manufacturer

The manufacturer of the MT47H64M16HW-3:H is Micron Technology, Inc. Micron is a global leader in memory and storage solutions, specializing in DRAM, NAND flash memory, and storage systems. Founded in 1978 and headquartered in Boise, Idaho, Micron designs and produces a wide range of semiconductor products used in various applications, including computing, mobile devices, and automotive systems. The company is known for its innovation in memory technology and plays a crucial role in the semiconductor industry, providing essential components for consumer electronics, enterprise solutions, and data centers. Micron operates on a global scale, with manufacturing facilities and sales offices worldwide, catering to a diverse set of customers across different sectors.

Application

The MT47H64M16HW-3:H is a DDR3 SDRAM memory chip commonly used in applications such as laptops, desktops, servers, gaming systems, networking equipment, and embedded systems. Its high-speed performance and data storage capabilities make it suitable for tasks requiring efficient multitasking, data buffering, and memory-intensive operations.

Equivalent

The MT47H64M16HW-3:H chip is a DDR3 SDRAM memory module. Equivalent products include:
1. Hynix H5TQ2G83AFR
2. Micron MT41J128M16HA-125
3. Samsung K4B4G1646D-BCK0
Ensure to verify compatibility regarding voltage, speed, and specifications before substitution.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

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