MT47H32M16NF-25E:H

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MT47H32M16NF-25E:H

IC DRAM 512MBIT PARALLEL 84FBGA

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  • Mfr. Parte #MT47H32M16NF-25E:H
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  • En stock2369

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Especificaciones

Part Status Active
Base Product Number MT47H32M16
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR2
Memory Size 512Mbit
Memory Organization 32M x 16
Memory Interface Parallel
Clock Frequency 400 MHz
Write Cycle Time - Word, Page 15ns
Voltage - Supply 1.7V ~ 1.9V
Operating Temperature 0°C ~ 85°C (TC)
Mounting Type Surface Mount
Package 84-TFBGA
Supplier Device Package 84-FBGA (8x12.5)
Packaging Bulk
Access Time 400 ps

Descripción general

Description

The MT47H32M16NF-25E:H is a DDR3 SDRAM (Synchronous Dynamic Random Access Memory) module produced by Micron Technology. It features a 256Mb configuration organized as 32 Meg x 16 bits, and it operates at a data rate of 800 MT/s (Mega Transfers per second) with a 25 ns cycle time. This memory module is designed for use in various applications, including desktop computers, laptops, and servers, providing high-speed data access and efficiency.
Key specifications include a voltage supply of 1.5V, low power consumption, and JEDEC compliance for seamless integration into systems. The part number indicates that it is a "high-performance" (H) variant, suitable for applications requiring reliable and fast memory performance. Its compact design and efficient power usage make it ideal for modern computing environments, supporting both consumer and enterprise-grade products.

Features

The MT47H32M16NF-25E is a 512Mb (megabit) DDR3 SDRAM memory chip manufactured by Micron Technology. Here are its key features:
1. Capacity: 512Mb (64MB) organized as 32M x 16 bits.
2. Technology: DDR3 DRAM, providing higher performance and efficiency compared to its predecessors.
3. Speed: Operates at a data rate of up to 1066 MT/s (million transfers per second).
4. Operating Voltage: Typically runs at 1.5V, which helps reduce power consumption.
5. Package Type: Available in a 78-ball FBGA (Fine Ball Grid Array) package, suitable for various applications.
6. Timing: Offers CAS latency options, typically 7, 8, or 9.
7. Features: Supports burst lengths of 4 and 8, and has built-in functionalities such as bank switching and auto-refresh.
8. Applications: Commonly used in consumer electronics, PCs, and embedded systems.
These features make it suitable for a range of applications requiring reliable memory performance.

Package

The MT47H32M16NF-25E:H is typically offered in a 78-ball TFBGA (Thin Fine Ball Grid Array) package. This type of packaging is designed for high-density memory applications, providing efficient thermal performance and space-saving characteristics suitable for various electronic devices.

Pinout

The MT47H32M16NF-25E:H is a DDR3 SDRAM memory chip with a pin count of 78. It features a x16 data width and is designed for applications requiring high-speed memory access.
Key functions of the chip include:
- Data Storage: It provides volatile memory storage for temporary data retention during operation.
- Data Transfer: Supports high-speed data transfer with a clock speed of 800 MHz (DDR3-1600).
- Core Voltage: Operates at a core voltage of 1.5V.
- Burst Mode: Supports burst read and write operations to enhance performance.
- Memory Management: Includes features for memory refresh and command interfacing.
This chip is commonly used in computing devices, including laptops and servers, to improve memory performance and efficiency.

Manufacturer

The manufacturer of the MT47H32M16NF-25E:H is Micron Technology, Inc. Micron is an American multinational corporation that specializes in the production of memory and storage solutions, including DRAM, NAND flash memory, and solid-state drives (SSDs). Founded in 1978, Micron is one of the largest producers of semiconductor memory in the world, serving various markets such as computing, mobile devices, automotive, and industrial applications. The company's products are integral to modern electronic devices, enabling efficient data storage and processing. Micron is known for its innovation in memory technology and plays a significant role in advancing the capabilities of digital products.

Application

The MT47H32M16NF-25E:H is a DDR3 SDRAM memory chip commonly used in applications such as laptops, desktops, servers, and networking equipment. It is suitable for high-performance computing, gaming systems, and embedded applications due to its high-speed data access and low power consumption. Additionally, it can be utilized in consumer electronics and industrial devices requiring reliable memory solutions.

Equivalent

The MT47H32M16NF-25E:H chip is a DDR3 SDRAM memory chip. Equivalent products include the Hynix H5TQ1G83EFR, Micron MT41J128M16HA, and Samsung K4B4G1646E. Always verify compatibility, specifications, and performance characteristics before substitution.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

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