MT47H256M8EB-25E:C

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MT47H256M8EB-25E:C

IC DRAM 2GBIT PARALLEL 60FBGA

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  • Mfr. Parte #MT47H256M8EB-25E:C
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Especificaciones

Part Status Last Time Buy
Base Product Number MT47H256M8
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR2
Memory Size 2Gbit
Memory Organization 256M x 8
Memory Interface Parallel
Clock Frequency 400 MHz
Write Cycle Time - Word, Page 15ns
Voltage - Supply 1.7V ~ 1.9V
Operating Temperature 0°C ~ 85°C (TC)
Mounting Type Surface Mount
Package 60-TFBGA
Supplier Device Package 60-FBGA (9x11.5)
Packaging Tray
Access Time 400 ps

Descripción general

Description

The MT47H256M8EB-25E:C is a DRAM (Dynamic Random Access Memory) chip produced by Micron Technology. It is a 256 Meg x 8 bits DDR3 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) module, designed for high-performance computing applications.
Key specifications include:
- Density: 2 Gigabytes (2Gb)
- Organization: 256 Meg x 8 bits
- Speed: Operates at a clock frequency of up to 800 MT/s (Mega-transfers per second)
- Voltage: Typically operates at 1.5V
- Package Type: Available in a compact FBGA (Fine Ball Grid Array)
This memory chip is utilized in various applications, including computers, servers, and embedded systems, providing fast data access and efficient performance. Its design adheres to JEDEC standards, ensuring compatibility with a wide range of devices. Additionally, the "C" at the end of the part number indicates it is a commercial-grade product, suitable for typical operating conditions.

Features

The MT47H256M8EB-25E:C is a DDR3 SDRAM memory chip manufactured by Micron Technology. It features a density of 256 megabits (32 megabytes), organized as 8 bits x 32, and operates at a clock speed of up to 800 MT/s (mega transfers per second). This chip is built using a 25nm process technology and supports a supply voltage of 1.5V, with a low-power option available at 1.35V.
Key features include:
- Data Rate: Up to 800 MT/s.
- Organization: 256M x 8 (8 bits wide).
- Bank Structure: 8 banks per device.
- Access Time: Low latency for improved performance.
- Package Type: Available in a standard 78-ball FBGA package.
- Operating Temperature Range: Supports various temperature grades, suitable for industrial applications.
This chip is designed for applications requiring high bandwidth and efficiency, such as computers, consumer electronics, and networking devices.

Package

The MT47H256M8EB-25E:C is packaged in a 78-ball FBGA (Fine Ball Grid Array) format. This type of package is designed for high-density memory applications and provides efficient thermal performance and compact design for mobile and embedded systems.

Pinout

The MT47H256M8EB-25E:C is a DDR3 SDRAM memory chip with a pin count of 78. It is designed for use in various memory applications, providing high-speed data transfer rates. The chip's primary functions include data storage and retrieval, enabling efficient performance in computing systems. It operates at a voltage of 1.5V and supports a variety of data rates, making it suitable for modern memory-intensive applications. The device features a x8 data width, allowing it to handle 8 bits of data simultaneously. Overall, it is optimized for high performance and energy efficiency in electronic devices.

Manufacturer

The manufacturer of the MT47H256M8EB-25E:C is Micron Technology, Inc. Micron is a leading global provider of advanced semiconductor solutions, primarily focusing on memory and storage products, including DRAM, NAND flash memory, and solid-state drives (SSDs). Founded in 1978 and headquartered in Boise, Idaho, Micron serves a wide range of markets, including computing, mobile, automotive, and industrial sectors. The company is known for its innovation in memory technology and plays a critical role in the supply chain for various electronic devices, from smartphones to data centers. Micron is publicly traded and is recognized as one of the major players in the semiconductor industry.

Application

The MT47H256M8EB-25E:C is a DDR3 SDRAM memory chip commonly used in various applications, including personal computers, servers, networking equipment, consumer electronics, and embedded systems. Its high-density and fast data transfer rates make it suitable for applications requiring efficient memory performance, such as gaming, graphics processing, and data-intensive tasks.

Equivalent

The MT47H256M8EB-25E:C chip is a DRAM memory device, specifically a DDR3 SDRAM. Equivalent products include:
1. Hynix H5TQ2G83AFR
2. Samsung K4B4G0846B
3. Micron MT41K256M8
4. Nanya NT5CB256M8BN
Check specifications for compatibility based on your application needs.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

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