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MT46H16M16LFBF-6:H
IC DRAM 256MBIT PARALLEL 60VFBGA
- Fabricante
- Mfr. Parte #MT46H16M16LFBF-6:H
- Paquete 60-VFBGA
- Hoja de datos
- En stock4182
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Especificaciones
| Package | Tray |
| ProductStatus | Obsolete |
| MemoryType | Volatile |
| MemoryFormat | DRAM |
| Technology | SDRAM - Mobile LPDDR |
| MemorySize | 256Mb (16M x 16) |
| MemoryInterface | Parallel |
| ClockFrequency | 166 MHz |
| WriteCycleTime-WordPage | 12ns |
| AccessTime | 5 ns |
| Voltage-Supply | 1.7V ~ 1.95V |
| OperatingTemperature | 0°C ~ 70°C (TA) |
| MountingType | Surface Mount |
| Package/Case | 60-VFBGA |
Descripción general
Description
- Capacity and organization: 256 Mb total, organized as 16M x 16-bit (16Mx16).
- Speed and interface: -6 speed grade (about 6 ns), DDR2-like operation up to ~333 MT/s.
- Voltage: 1.8 V I/O/core (typical for mobile DDR2).
- Package: Lead-free FBGA (LFBF).
- Banks and features: Multi-bank, synchronous operation with standard DDR2 features (burst, refresh, etc.).
- Use case: Designed for mobile/low-profile systems (laptops, tablets); typically used alongside a memory controller and may be paired to form wider data paths.
- Notes: For exact timings (tRC, tRCD, tRP, etc.) and electrical details, consult the official Micron MT46H16M16LFBF-6:H datasheet.
Features
- 256 Mb total, organized 16M x 16
- DDR2 SDRAM, 1.8V I/O (Vcc/Vdd)
- Speed grade: -6 (high-speed grade)
- Banks: 4; Burst length 4/8; Burst type: sequential
- Fully synchronous with clock; supports auto refresh and partial array refresh
- ZQ calibration for impedance tuning; on-die termination options
- Deep power-down mode for low power
- Lead-free, RoHS-compliant FBGA package (LFBF)
- Temperature options: commercial/industrial versions (check datasheet for exact range)
Note: exact timings and operating temperature depend on the specific grade and configuration; refer to the JEDEC DDR2-STD and Micron datasheet for precise specs.
Package
Pinout
- Function: 256-Mbit Mobile DDR2 SDRAM, organized as 16M x 16 (16-bit wide), 4 banks, 1.8V, synchronous DRAM.
Manufacturer
- What kind of company: An American multinational semiconductor company that designs and manufactures memory and storage products (DRAM, NAND flash, etc.).
Application
- Main memory for handheld/embedded systems
- Mobile devices (phones, PDAs, tablets, portable media players)
- Digital cameras/camcorders and portable gaming devices
- Embedded controllers, IoT, compact consumer electronics
- Small-form-factor notebooks or memory buffers in compact systems
Equivalent
- Memory type (DDR2 or DDR3)
- Density/organization (e.g., 256 Mb, 16M×16)
- Temperature range and package
With that, I can provide cross-ref parts from Samsung, Hynix, Nanya, etc.
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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