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MT41K64M16TW-107 IT:J
1.283V~1.45V 1Gbit 933MHz DDR3L SDRAM FBGA-96 Memory (ICs) RoHS
- Fabricante
- Mfr. Parte #MT41K64M16TW-107 IT:J
- Paquete
- Hoja de datos
- En stock29058
100% original & Nuevo
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Garantía de 365 días
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Especificaciones
| Packaging | FBGA-96 |
| Clock Frequency | 933MHz |
| Memory Format | DDR3L SDRAM |
| Memory Size | 1Gbit |
| Operating temperature | -40℃~+95℃ |
| Voltage - Supply | 1.283V~1.45V |
Descripción general
Description
Key specifications include a supply voltage of 1.5V, support for multiple bus widths, and a package type that allows for easy integration into various circuit boards. The "IT" designation indicates that the component is intended for industrial temperature ranges, ensuring reliable performance in demanding environments.
The MT41K64M16TW-107 IT:J is commonly used in consumer electronics, telecommunications, and industrial systems due to its balance of performance, power efficiency, and robustness.
Features
1. Density: It offers a density of 1GB per chip, with 4 banks of memory.
2. Data Rate: Supports data rates up to DDR3L-1600 (PC3L-12800), ensuring fast data transfer.
3. Power Supply: Operates at a low voltage of 1.35V, which is ideal for energy-efficient mobile devices.
4. Packaging: Available in a 78-ball TFBGA package, suitable for compact designs.
5. Error Correction: Supports ECC (Error Correction Code) for data integrity.
6. Temperature Range: Designed for a temperature range of -40°C to +95°C, making it suitable for a variety of environmental conditions.
This component is widely used in smartphones, tablets, and other mobile electronics, providing reliable and efficient memory performance.
Package
Pinout
This memory device is organized as 64 Meg x 16 bits, providing a total capacity of 1GB. It operates at a frequency of 1066 MT/s with a voltage of 1.5V. The specific functions of the pins include data input/output, address lines, control signals, and power/ground connections. Key pins include:
- DQ (Data Input/Output): Carries the data.
- A (Address): Used to select the memory addresses.
- BA (Bank Address): Specifies the bank within the memory array.
- CS (Chip Select): Activates the chip.
- RAS, CAS, WE (Row Address Strobe, Column Address Strobe, Write Enable): Control signals for read/write operations.
This device is suitable for applications requiring reliable performance in computing and embedded systems.
Manufacturer
Application
Equivalent
- Hynix H5TQ4G63AFR
- Samsung K4B4G1646E
- Micron MT41K64M16JT-107
- Nanya NT5CB256M16HR
Always verify compatibility based on specifications like speed, voltage, and capacity for your specific application.
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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