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MT41K512M8DA-093:P
IC DRAM 4GBIT PAR 78FBGA
- Fabricante
- Mfr. Parte #MT41K512M8DA-093:P
- Paquete
- Hoja de datos
- En stock4579
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Especificaciones
| Part Status | Active |
| Base Product Number | MT41K512M8 |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3L |
| Memory Size | 4Gbit |
| Memory Organization | 512M x 8 |
| Memory Interface | Parallel |
| Clock Frequency | 1.066 GHz |
| Voltage - Supply | 1.283V ~ 1.45V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package | 78-TFBGA |
| Supplier Device Package | 78-FBGA (8x10.5) |
| Packaging | Tray |
| Access Time | 20 ns |
Descripción general
Description
This memory chip is designed with a low voltage of 1.35V, which helps in reducing power consumption while maintaining performance. It supports various thermal and electrical characteristics that conform to industry standards, ensuring compatibility with a wide range of motherboards and controllers. The MT41K512M8DA-093:P is commonly utilized in laptops, desktops, and servers, where efficient memory performance is crucial. Its robust design also includes features for data integrity and reliability, making it a preferred choice for memory-intensive applications.
Features
- Type: DDR3 SDRAM
- Organization: 512 Meg x 8 bits
- Density: 4 Gigabits (Gb)
- Package: 78-ball FBGA (Fine Ball Grid Array)
- Speed: Operates at data rates up to 1600 MT/s (megatransfers per second)
- Voltage: 1.5V (standard operating voltage)
- Features:
- On-die termination (ODT) for improved signal integrity
- Low power consumption suitable for various applications
- Compatible with JEDEC standards for DDR3 memory
- Supports burst lengths of 4 and 8
This memory chip is ideal for use in laptops, desktops, servers, and other applications requiring reliable high-speed memory. Its design ensures compatibility and efficiency in data processing tasks.
Package
Pinout
The key functions of this memory include serving as dynamic random-access memory (DRAM) for high-performance computing applications, supporting features such as burst mode, and providing low latency access to data. It typically interfaces with a memory controller in various electronic devices, enabling efficient data storage and retrieval in computing systems. The "093" in the part number indicates the speed grade, while the ":P" denotes the Pb-free (lead-free) package, complying with environmental regulations.
Manufacturer
Application
Equivalent
1. Hynix H5TQ2G83EFR - DDR3 SDRAM
2. Samsung K4B4G1646F - DDR3 SDRAM
3. Micron MT41K512M8DA - DDR3 DRAM
Ensure compatibility with specific system requirements and configurations before substitution.
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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