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MT41K512M16HA-107IT:A
- Fabricante
- Mfr. Parte #MT41K512M16HA-107IT:A
- Paquete
- Hoja de datos
- En stock6103
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Especificaciones
| Manufacturer | Micron Tech |
| Package | FBGA |
Descripción general
Description
The "107IT" in the part number indicates its speed grade and temperature range. It supports data rates up to 1066 MT/s (megatransfers per second) and can operate in industrial temperature ranges, making it suitable for use in a variety of environments and applications requiring reliability under extreme conditions.
This DRAM is typically used in computing and networking applications, including servers, workstations, and embedded systems, where high bandwidth and low power usage are crucial. Additionally, it includes features like auto-refresh and self-refresh modes and a programmable mode register, enhancing its versatility and reliability in different scenarios.
Features
1. Density and Configuration: It has a 4Gb density organized as 512Mb x 16.
2. Low Voltage: Operates at 1.35V, making it more power-efficient compared to standard DDR3.
3. Speed: Supports a data rate of up to 1866 MT/s (megatransfers per second).
4. Package: Comes in a 96-ball FBGA (Fine-Pitch Ball Grid Array) package, which is compact and suitable for high-density applications.
5. Temperature Range: Designed for industrial temperature applications, with an operating range from -40°C to +95°C.
6. Reliability Features: Includes on-die termination and an auto-refresh feature to enhance data integrity and reliability.
7. Compatibility: Backward compatible with DDR3, allowing for versatile integration into various systems.
8. Applications: Ideal for use in computing, communications, and consumer electronics where low power and high speed are essential.
These attributes make the MT41K512M16HA-107IT:A suitable for applications requiring efficient performance in challenging environments.
Package
Pinout
Key functions of this DRAM include:
1. Data Storage: Provides volatile storage for active data and applications.
2. High-Speed Operation: Supports data rates up to 1866 MT/s (megatransfers per second), depending on system configuration.
3. Low Voltage Operation: Designed to operate at a lower voltage (1.35V) to reduce power consumption.
4. Bank Architecture: Contains multiple banks for improved performance with bank interleaving.
This component is typically used in computing devices, telecommunications hardware, and other electronic systems requiring high-speed temporary data storage.
Manufacturer
Application
Equivalent
1. H5TQ4G63CFR-PBC from SK Hynix.
2. K4B4G1646D-BCK0 from Samsung.
3. W631GG6KB-12I from Winbond.
4. EM6GD16EWAKG-12I from Etron Technology.
These equivalents offer similar specifications in terms of memory size, speed, and temperature ranges, making them suitable alternatives for applications requiring DDR3 SDRAM.
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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