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MT41K256M16TW-107:P TR
DRAM DDR3 4G 256MX16 FBGA
- Fabricante
- Mfr. Parte #MT41K256M16TW-107:P TR
- Paquete
- Hoja de datos MT41K256M16TW-107:P TR DataSheet
- En stock6146
100% original & Nuevo
24 horas listos para el envío
Garantía de 365 días
RFQ y Obtenga más descuentos
Especificaciones
| Packaging | MouseReel |
| Standard Pack Qty | 2000 |
Descripción general
Description
This DRAM is typically used in various electronic devices, including computers and servers, where it provides efficient data storage and quick access times. The "P" suffix denotes the part is in a specific package type, while "TR" indicates that the part is available in tape and reel packaging, suitable for automated assembly processes.
Key features include low power consumption, high bandwidth, and compatibility with industry-standard DDR3 interfaces. It is ideal for applications requiring reliable memory performance and efficiency, making it a popular choice in the market.
Features
1. Density: 4GB (256M x 16 bits).
2. Data Rate: Operates at a speed of 1066 MT/s.
3. Configuration: It is organized as 256M x 16 (16-bit wide).
4. Voltage: Operates at a low voltage of 1.5V, ensuring power efficiency.
5. Package Type: Comes in a 78-ball TFBGA (Thin Fine Ball Grid Array) package.
6. Row and Column Addresses: 13-bit row and 10-bit column addressing.
7. Burst Length: Supports burst lengths of 4 and 8.
8. Temperature Range: Designed for commercial temperature range (-40°C to +85°C).
9. Features: Includes features like on-die termination (ODT) and an integrated self-refresh mode.
10. Applications: Suitable for various applications including laptops, desktops, and servers.
This chip is optimized for performance and energy efficiency in memory-intensive applications.
Package
Pinout
Key functions of the chip include:
- Data Storage: It serves as a volatile memory solution for various applications, storing data temporarily during operation.
- Memory Interface: It uses a DDR3 interface for high-speed data transfer, supporting clock speeds of up to 1600 MT/s.
- Power Management: The chip operates at a supply voltage of 1.5V, with low power consumption features to enhance energy efficiency.
- Signal Integrity: It includes features for improved signal integrity and reduced noise, ensuring reliable performance.
This memory device is commonly used in consumer electronics, computing devices, and networking equipment.
Manufacturer
Application
Equivalent
1. Hynix H5TQ2G83CFR - DDR3 2GB 256Mx16
2. Samsung K4B4G1646D - DDR3 2GB 256Mx16
3. Micron MT41K256M16HA-125 - DDR3 2GB 256Mx16
Ensure compatibility with your specific application requirements before substituting.
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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