MT41K256M16TW-107 IT:P

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MT41K256M16TW-107 IT:P

1.283V~1.45V 4Gbit DDR3L SDRAM FBGA-96 Memory (ICs) RoHS

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  • Mfr. Parte #MT41K256M16TW-107 IT:P
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Especificaciones

Packaging FBGA-96
Current - Supply 32mA
Memory Format DDR3L SDRAM
Memory Size 4Gbit
Operating temperature -40℃~+95℃
Refresh Current 15mA
Voltage - Supply 1.283V~1.45V

Descripción general

Description

The MT41K256M16TW-107 IT:P is a DDR4 SDRAM memory chip manufactured by Micron Technology. It features a density of 4GB (256M x 16 bits) and operates at a data rate of 2400 MT/s (megatransfers per second), with a typical latency and performance suitable for various applications, including consumer electronics and computing devices.
Key specifications include a 1.2V supply voltage, which is lower than previous DDR generations, contributing to improved power efficiency. The chip is built using a 16-bit I/O architecture and supports various features like on-die termination (ODT) and burst lengths. Its packaging is designed for integration into numerous electronic systems, making it versatile for manufacturers.
The "IT" designation indicates that the chip is part of the industrial temperature range, ensuring reliable operation in harsher environments. The "P" suffix signifies it is a Pb-free (lead-free) component, aligning with environmentally friendly manufacturing practices. Overall, the MT41K256M16TW-107 IT:P provides a reliable, efficient solution for modern memory needs.

Features

The MT41K256M16TW-107 IT:P is a DRAM memory chip manufactured by Micron Technology. It is a DDR3 SDRAM (double data rate synchronous dynamic random-access memory) component, featuring a density of 4GB (256M x 16 bits). Key features include:
1. Speed Grade: Operates at a data rate of 1066 MT/s.
2. Voltage: Requires a supply voltage of 1.5V, with an optional low voltage of 1.35V (DDR3L).
3. Packaging: Available in a 78-ball FBGA (Fine Ball Grid Array) package, facilitating compact design in applications.
4. Interface: Supports a 16-bit wide data bus, allowing efficient data transfer.
5. Temperature Range: Designed for Industrial temperature range (-40°C to +95°C), making it suitable for harsh environments.
6. Features: Includes support for burst lengths of 4 and 8, and has built-in self-refresh capabilities.
This chip is typically used in applications such as embedded systems, industrial computers, and networking equipment, where reliability and performance are critical.

Package

The MT41K256M16TW-107 IT:P is a DRAM memory chip packaged in a 78-ball FBGA (Fine Ball Grid Array) format. This type of packaging allows for efficient heat dissipation and a compact footprint, suitable for various electronic applications.

Pinout

The MT41K256M16TW-107 IT:P is a mobile DRAM chip with a pin count of 78. It features a 16-bit data width and a density of 4GB (256M x 16). The main functions of this DDR3 SDRAM include providing high-speed data access and supporting various memory operations such as read, write, and refresh. It operates at a voltage of 1.5V and supports a data rate of 1066 MT/s (megatransfers per second). It is commonly used in mobile devices, laptops, and other applications requiring efficient memory solutions. The chip is designed for low power consumption, making it suitable for battery-operated devices.

Manufacturer

The manufacturer of the MT41K256M16TW-107 IT:P is Micron Technology, Inc. Micron is a leading global provider of memory and storage solutions, specializing in DRAM, NAND flash memory, and other semiconductor products. Founded in 1978 and headquartered in Boise, Idaho, Micron serves various markets, including computing, mobile, automotive, and industrial applications. The company is known for its innovative technologies and plays a significant role in advancing memory solutions to meet the growing demands of modern electronic devices. Micron is publicly traded on the NASDAQ under the ticker symbol "MU."

Application

The MT41K256M16TW-107 IT:P is a DDR3 SDRAM memory chip commonly used in various applications, including automotive systems, networking equipment, industrial automation, and consumer electronics. Its features, such as high speed and reliability, make it suitable for memory-intensive tasks in servers, laptops, and embedded systems. Additionally, the chip's temperature range and robustness cater to harsh operating environments, enhancing its utility in automotive and industrial applications.

Equivalent

The MT41K256M16TW-107 IT:P chip is a 4GB DDR3 SDRAM memory chip with a data rate of 1600 MT/s. Equivalent products include:
1. Hynix H5TQ4G83BFR - 4GB DDR3 1600 MT/s
2. Samsung K4B4G0846E-BCK0 - 4GB DDR3 1600 MT/s
3. Micron MT41K256M16HA - Another variant of DDR3 with similar specifications.
Always verify compatibility with your specific application.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria