MT41J256M16HA-125:E

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MT41J256M16HA-125:E

IC DRAM 4GBIT PARALLEL 96FBGA

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  • Mfr. Parte #MT41J256M16HA-125:E
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Especificaciones

Part Status Obsolete
Base Product Number MT41J256M16
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR3
Memory Size 4Gbit
Memory Organization 256M x 16
Memory Interface Parallel
Clock Frequency 800 MHz
Voltage - Supply 1.425V ~ 1.575V
Operating Temperature 0°C ~ 95°C (TC)
Mounting Type Surface Mount
Package 96-TFBGA
Supplier Device Package 96-FBGA (9x14)
Packaging Tray
Access Time 13.75 ns

Descripción general

Description

The MT41J256M16HA-125:E is a DRAM memory chip from Micron Technology, specifically a DDR3 SDRAM device. It features a density of 256 megabits per die and comes in a 16-bit I/O configuration, making it suitable for various applications requiring high-performance memory. The "125" in its name indicates that it operates at a speed of 1,600 MT/s (megatransfers per second), while the "E" signifies that it is RoHS compliant, meaning it adheres to environmental regulations regarding hazardous substances.
This memory chip is typically used in applications such as computers, servers, and networking equipment, where reliable and efficient memory performance is critical. It has a standard x8 or x16 organization and operates at a voltage of 1.5V. The package options and configurations support a wide range of system designs, making it versatile for different computing needs. The device also includes various features for power management and data integrity, further enhancing its usability in modern electronic systems.

Features

The MT41J256M16HA-125:E is a DRAM memory component from Micron Technology, specifically a DDR3 SDRAM (Synchronous Dynamic Random Access Memory) in a 16-bit configuration. Here are its key features:
1. Density: 256 Megabits (32 Megabytes) per chip.
2. Organization: 16M x 16 bit configuration.
3. Data Rate: Operates at a data rate of up to 1600 MT/s (megatransfers per second).
4. Access Time: Offers low latency with a CAS latency of 11.
5. Voltage: Operates at a supply voltage of 1.5V (±0.075V).
6. Temperature Range: Suitable for commercial temperature ranges (0 to 85°C).
7. Packaging: Available in a 78-ball TFBGA package.
8. Features: Includes features like burst mode, on-die termination (ODT), and self-refresh capability.
This memory chip is commonly used in applications like consumer electronics, laptops, and other devices requiring efficient and reliable memory solutions.

Package

The MT41J256M16HA-125:E is a DDR3 SDRAM memory chip packaged in a 78-ball FBGA (Fine Ball Grid Array).

Pinout

The MT41J256M16HA-125:E is a DDR3 SDRAM memory chip with a pin count of 78. It is designed to operate with a supply voltage of 1.5V, and its main function is to provide high-speed memory storage for various applications, including computers and mobile devices.
Key functions of the MT41J256M16HA-125:E include:
- Data Storage: It offers a capacity of 4GB (256M x 16 bits).
- High-Speed Operation: Supports data rates up to 1600 MT/s.
- Low Power Consumption: Designed for energy efficiency, reducing overall power usage in devices.
- Burst Mode: Enables high-speed data transfers by allowing multiple data bits to be read or written in succession.
The device is commonly used in consumer electronics, computing systems, and other applications requiring reliable and fast memory performance.

Manufacturer

The manufacturer of the MT41J256M16HA-125:E is Micron Technology, Inc. Micron is a leading global provider of memory and storage solutions, specializing in DRAM, NAND flash memory, and other semiconductor products. Founded in 1978 and based in Boise, Idaho, Micron serves a variety of markets including computing, mobile, automotive, and industrial sectors. The company is known for its innovative approach to memory technologies, focusing on high-performance and reliable solutions to meet the demands of modern applications. Micron's products are widely used in consumer electronics, data centers, and enterprise systems, making it a key player in the semiconductor industry.

Application

The MT41J256M16HA-125:E is a 4Gb DDR3 SDRAM memory chip primarily used in applications such as computers, servers, networking equipment, and consumer electronics. Its high-speed performance and reliability make it suitable for tasks requiring substantial memory bandwidth, including gaming, multimedia processing, and data-intensive applications in computing environments.

Equivalent

The MT41J256M16HA-125:E is a DDR3 SDRAM memory chip. Equivalent products include:
1. Hynix H5TQ2G83BFR (DDR3, 2Gb)
2. Samsung K4B4G1646F (DDR3, 2Gb)
3. Micron MT41J256M16HA-15 (DDR3, 2Gb with different speed)
4. Nanya NT5CB256M16DP (DDR3, 2Gb)
Always verify compatibility with specific requirements and configurations.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

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