MT40A512M16LY-062E IT:E

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MT40A512M16LY-062E IT:E

1.14V~1.26V 8Gbit 1.6GHz DDR4 SDRAM FBGA-96 Memory (ICs) RoHS

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  • Mfr. Parte #MT40A512M16LY-062E IT:E
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Especificaciones

Packaging FBGA-96
Clock Frequency 1.6GHz
Current - Supply 56mA
Memory Format DDR4 SDRAM
Memory Size 8Gbit
Operating temperature -40℃~+95℃
Refresh Current 8.6mA
Voltage - Supply 1.14V~1.26V

Descripción general

Description

The MT40A512M16LY-062E is a type of DRAM (Dynamic Random Access Memory) module manufactured by Micron Technology. It belongs to the DDR4 (Double Data Rate 4) Synchronous DRAM family, specifically designed for high-performance computing applications. This particular chip features a density of 512 MB per die and offers a 16-bit data width. The "-062E" designation indicates a specific memory speed, typically around 1600 MT/s (million transfers per second).
Key features include low power consumption, enhanced data transfer rates, and improved bandwidth compared to previous generations. The "IT:E" suffix refers to the memory’s operating temperature range and environmental specifications, indicating industrial-grade reliability for demanding conditions.
Ideal for applications in servers, workstations, and other computing environments, the MT40A512M16LY-062E supports various memory configurations and is commonly used in devices requiring robust performance and efficiency.

Features

The MT40A512M16LY-062E IT:E is a DRAM memory chip produced by Micron Technology. It is a 4Gb (512MB) DDR3 SDRAM device organized as 16-bit wide, with a 32-bit data bus. Here are its key features:
1. Density: 4Gb (512MB) capacity.
2. Technology: DDR3 SDRAM, offering higher data rates and improved performance compared to DDR2.
3. Speed: Operates at a clock frequency of 1600 MT/s (megatransfers per second).
4. Voltage: Typically operates at a supply voltage of 1.5V.
5. Package: Available in a 78-ball FBGA (Fine Ball Grid Array) package, which is compact and suitable for use in various applications.
6. Latency: Offers low latency access, enhancing overall system performance.
7. Applications: Ideal for use in consumer electronics, networking equipment, and computing systems requiring efficient memory solutions.
This device is particularly suited for applications that demand high speed and efficiency in data processing.

Package

The MT40A512M16LY-062E IT:E is a DDR4 SDRAM memory chip packaged in a FBGA (Fine Ball Grid Array) format. This package type is characterized by its small size and allows for efficient electrical performance and thermal management in high-density applications.

Pinout

The MT40A512M16LY-062E IT:E is a 512 Mb (megabit) DRAM chip from Micron Technology. It features a pin count of 78. This DRAM component is typically used in mobile applications, offering a low power consumption profile.
The functions of the pins include:
- Data Pins (DQ): 16 pins used for bi-directional data transfer.
- Address Pins (A): Pins used to select memory addresses for read/write operations.
- Control Pins: Includes pins for chip enable (CE), write enable (WE), read enable (RE), and more, used to manage device operations.
- Power Supply Pins (VDD, VSS): Supply power to the chip and ground connections.
- Clock Pins (CLK): Used for synchronous operations.
This device supports a variety of functionalities suitable for high-performance memory requirements in mobile devices.

Manufacturer

The manufacturer of the MT40A512M16LY-062E IT:E is Micron Technology, Inc. Micron is an American multinational corporation that specializes in the production of semiconductor devices, particularly dynamic random-access memory (DRAM), NAND flash memory, and other memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron is one of the largest memory manufacturers globally, serving various industries, including computing, mobile, automotive, and enterprise storage. The company is known for its innovative memory technologies and plays a significant role in advancing memory capabilities in electronic devices.

Application

The MT40A512M16LY-062E IT:E is a DDR3 SDRAM memory chip commonly used in applications such as networking equipment, telecommunications, servers, and embedded systems. Its high density and speed make it suitable for data-intensive environments like cloud computing, data centers, and industrial automation. Additionally, it may be utilized in consumer electronics and computing devices where efficient memory performance is required.

Equivalent

The MT40A512M16LY-062E IT:E is a DDR3 SDRAM memory chip. Equivalent products include:
1. Hynix H5TQ2G83AFR
2. Samsung K4B4G1646F-HCH9
3. Micron MT41K256M16HA-125
Always verify compatibility with specific applications and configurations.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

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