MT40A2G8NRE-083E:B

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MT40A2G8NRE-083E:B

IC DRAM 16GBIT PARALLEL 78FBGA

  • Fabricante
  • Mfr. Parte #MT40A2G8NRE-083E:B
  • Paquete FBGA-78
  • Hoja de datos
  • En stock6243

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Especificaciones

Package Tray
ProductStatus Obsolete
MemoryType Volatile
MemoryFormat DRAM
Technology SDRAM - DDR4
MemorySize 16Gb (2G x 8)
MemoryInterface Parallel
ClockFrequency 1.2 GHz
Voltage-Supply 1.14V ~ 1.26V
OperatingTemperature 0°C ~ 95°C (TC)
MountingType Surface Mount
Package/Case 78-TFBGA

Descripción general

Description

The MT40A2G8NRE-083E:B is a memory module produced by Micron Technology, specifically designed for high-performance computing and server applications. It belongs to the DDR4 SDRAM family, offering improved speed, efficiency, and capacity compared to previous generations. This module features 8GB of memory, with a data rate of 2400 MT/s, ensuring quick data access and processing capabilities.
Key specifications include a 1.2V operating voltage, which contributes to lower power consumption and enhanced thermal performance. The module follows the JEDEC standards, ensuring compatibility with a wide range of systems. The MT40A2G8NRE-083E:B is ideal for applications requiring robust memory performance, including cloud computing, data centers, and enterprise-level servers.
In summary, this memory module is engineered for optimal performance and reliability, making it suitable for demanding workloads in modern computing environments.

Features

The MT40A2G8NRE-083E:B is a high-performance DDR4 DRAM memory module developed by Micron Technology. Here are its key features:
1. Capacity: 16GB (2x8GB) configuration, suited for high-capacity needs.
2. Data Rate: Operates at a data rate of 2400 MT/s (million transfers per second), providing efficient performance for various applications.
3. Organization: Features a 2x8 organization, which enhances data handling and throughput.
4. Voltage: Operates at a low voltage of 1.2V, leading to reduced power consumption and heat generation.
5. Form Factor: Available in a compact DDR4 SO-DIMM format, ideal for laptops and small devices.
6. Latency: Offers a CAS latency of CL17, balancing speed and performance.
7. Compatibility: Designed to meet JEDEC standards, ensuring compatibility with a wide range of systems.
8. Error Correction: Supports ECC (Error Correction Code) for improved data integrity.
This memory module is suitable for applications in gaming, workstations, and data centers where performance and efficiency are critical.

Package

The MT40A2G8NRE-083E:B is a DRAM memory chip packaged in a 78-ball FBGAA (Fine Pitch Ball Grid Array) format. This package type is suitable for high-density applications and provides improved thermal performance and electrical characteristics.

Pinout

The MT40A2G8NRE-083E:B is a DRAM memory chip produced by Micron Technology. It has a pin count of 78 pins and follows the DDR3 SDRAM (double data rate synchronous dynamic random-access memory) architecture. This specific model is designed for applications requiring high performance and efficiency, typically used in various computing and networking devices.
The primary functions of the MT40A2G8NRE-083E:B include data storage, memory access, and data transfer. It operates at a voltage of 1.5V and supports a range of data rates, enhancing the speed and efficiency of memory operations. The chip features a wide I/O interface, allowing for faster data throughput, which is essential in applications like servers, mobile devices, and high-performance computing systems.

Manufacturer

The MT40A2G8NRE-083E:B is manufactured by Micron Technology, Inc. Micron is a global leader in the semiconductor industry, specializing in memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron produces a variety of memory products, including DRAM, NAND flash, and NOR flash memory. Their technologies are widely used in computing, mobile devices, automotive, and industrial applications. Micron is recognized for its innovation in memory solutions and plays a significant role in advancing data storage and processing capabilities across various sectors.

Application

The MT40A2G8NRE-083E:B is a DDR4 DRAM memory chip commonly used in applications such as high-performance computing, servers, networking equipment, and mobile devices. It supports data-intensive tasks like gaming, data analytics, and artificial intelligence, providing efficient memory solutions for modern computing needs.

Equivalent

The MT40A2G8NRE-083E:B is a DDR3 DRAM chip. Equivalent products can include:
1. Hynix H5TQ2G83CFR - DDR3
2. Samsung K4B4G1646D - DDR3
3. Micron MT41K256M16 - DDR3
Always check specifications for compatibility such as speed, voltage, and organization before substitution.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

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