MT40A256M16GE-062E:B

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MT40A256M16GE-062E:B

IC DRAM 4GBIT PARALLEL 96FBGA

  • Fabricante
  • Mfr. Parte #MT40A256M16GE-062E:B
  • Paquete 96-TFBGA
  • Hoja de datos
  • En stock2897

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Especificaciones

Package Tray
ProductStatus Obsolete
MemoryType Volatile
MemoryFormat DRAM
Technology SDRAM - DDR4
MemorySize 4Gb (256M x 16)
MemoryInterface Parallel
ClockFrequency 1.6 GHz
Voltage-Supply 1.14V ~ 1.26V
OperatingTemperature 0°C ~ 95°C (TC)
MountingType Surface Mount
Package/Case 96-TFBGA

Descripción general

Description

MT40A256M16GE-062E:B is Micron’s DDR3 SDRAM device. Key points:
- Type/ role: DDR3 DRAM chip, not a module.
- Capacity/ organization: 4 Gbit total per die (256M × 16).
- Data width: x16 I/O.
- Interface/ speed: DDR3; speed grade encoded in the -062E suffix (exact timing/specs in the datasheet).
- Voltage: typically ~1.5 V for standard DDR3 (some variants/steps use 1.35 V for DDR3L; verify in the datasheet).
- Package: a small BGA device (suffix B indicates RoHS-compliant variant).
- Applications: used on memory modules or boards with a DDR3 memory controller (DIMMs, embedded/processor boards).
- Notes: For exact timing (tRCD, tRP, tRAS), voltage, temperature range, and packaging, refer to Micron’s datasheet for MT40A256M16GE-062E:B.

Features

MT40A256M16GE-062E:B is a DDR3 SDRAM device. Key features typically include:
- Capacity/organization: 512 MB total (256M x 16)
- Data width: x16
- Banks: 8 banks
- Burst length: 8
- Speed: DDR3-1066/1333/1600 MT/s (device-dependent)
- Voltage: 1.5V (DDR3) with DDR3L variants supporting 1.35V
- Features: synchronous, on-die termination, DLL, Auto/Self refresh, ZQ calibration, partial array power-down, deep power-down
- Packaging: commonly FBGA (per datasheet)
- JEDEC-compliant DDR3 device, suitable for notebooks, embedded/applications requiring mid-density memory
Note: exact speed grade and voltage can vary by lot; please consult the datasheet for precise specifications.

Package

BGA package (FBGA).

Pinout

- Pin count: 96-ball FBGA package (96 pins)
- Function: DDR3 SDRAM device with 256M × 16 organization (roughly 4 Gbit per device), 8-bank memory core.

Manufacturer

- Manufacturer: Micron Technology, Inc.
- What kind of company: An American multinational semiconductor company that designs, manufactures, and sells memory and storage technologies (DRAM, NAND/NOR flash, etc.) for computers, servers, mobile devices, and other electronics.

Application

MT40A256M16GE-062E:B is a Micron DDR4 SDRAM device (256K x 16). Typical application areas include:
- Desktop and laptop main memory
- Servers and data centers
- Graphics cards and multimedia devices
- Networking equipment and storage controllers
- Embedded systems and other DDR4-based memory subsystems

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

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