MT40A1G16KD-062E:E

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MT40A1G16KD-062E:E

IC DRAM 16GBIT PARALLEL 96FBGA

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  • Mfr. Parte #MT40A1G16KD-062E:E
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Especificaciones

Part Status Obsolete
Base Product Number MT40A1G16
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR4
Memory Size 16Gbit
Memory Organization 1G x 16
Memory Interface Parallel
Clock Frequency 1.6 GHz
Write Cycle Time - Word, Page 15ns
Voltage - Supply 1.14V ~ 1.26V
Operating Temperature 0°C ~ 95°C (TC)
Mounting Type Surface Mount
Package 96-TFBGA
Supplier Device Package 96-FBGA (9x13)
Packaging Bulk
Access Time 19 ns

Descripción general

Description

The MT40A1G16KD-062E is a DRAM (Dynamic Random Access Memory) component manufactured by Micron Technology. It is part of the DDR4 SDRAM family, designed for high-performance memory applications. This specific model features a 1Gb density, organized as 16 bits by 1 Gbit, making it suitable for various devices, from smartphones to servers.
Key specifications include a data rate of up to 2400 MT/s, with a supply voltage of 1.2V, which contributes to lower power consumption compared to earlier memory technologies. The component supports features like CAS latency, which can vary depending on the configuration, and it adheres to the JEDEC standards for DDR4 memory.
Overall, the MT40A1G16KD-062E is ideal for applications requiring efficient data handling and quick access speeds, making it a vital component in modern computing environments.

Features

The MT40A1G16KD-062E:E is a DDR4 SDRAM memory chip produced by Micron Technology. Here are its key features:
1. Capacity: 1 Gigabit (Gb), equating to 128 Megabytes (MB).
2. Configuration: It is organized as 16 bits x 8 banks, suitable for various applications including mobile and embedded systems.
3. Speed: Supports data rates of up to 2133 MT/s (megatransfers per second).
4. Voltage: Operates at a low voltage of 1.2V, contributing to energy efficiency.
5. Package: Available in a 78-ball TFBGA (Thin Fine Ball Grid Array) package for compact designs.
6. Temperature Range: Typically specified for commercial temperature ranges.
7. ECC support: May support error-correcting code (ECC) for improved data integrity.
This chip is ideal for applications requiring reliable and efficient memory solutions, such as consumer electronics and IoT devices.

Package

The MT40A1G16KD-062E:E is a DDR3 SDRAM memory chip packaged in a 78-ball BGA (Ball Grid Array) form factor. This packaging ensures efficient thermal management and compact design suitable for various electronic applications.

Pinout

The MT40A1G16KD-062E:E is a DDR3 SDRAM memory chip from Micron Technology. It has a pin count of 78. This chip is designed for high-performance applications and operates at a data rate of 1600 MT/s (megatransfers per second) with a voltage supply of 1.5V.
The primary functions of this memory chip include data storage and retrieval in computing systems, particularly in devices requiring fast and efficient access to data, such as laptops and servers. It features a synchronous dynamic random access memory (SDRAM) interface, allowing it to synchronize with the system bus and provide high-speed data transfer.
In summary, the MT40A1G16KD-062E:E has 78 pins and serves as a DDR3 SDRAM, enabling fast data access and storage in modern electronic devices.

Manufacturer

The manufacturer of the MT40A1G16KD-062E:E is Micron Technology, Inc. Micron is a leading global provider of innovative memory and storage solutions, specializing in DRAM, NAND flash memory, and SSDs. Founded in 1978 and headquartered in Boise, Idaho, the company serves various markets, including computing, mobile, automotive, and industrial applications. Micron is known for its focus on research and development, driving advancements in memory technology to meet growing data demands.

Application

The MT40A1G16KD-062E:E is a DDR3 SDRAM memory chip primarily used in consumer electronics, such as smartphones, tablets, and laptops. Its application areas include high-performance computing, graphics processing, and industrial systems that require reliable data storage and fast access speeds. Additionally, it is suitable for networking equipment and automotive applications, enhancing overall system performance and efficiency.

Equivalent

The MT40A1G16KD-062E:E chip is a DDR3 SDRAM memory chip. Equivalent products include:
1. Hynix H5TQ2G63AFR-H9C
2. Samsung K4B4G1646F-HCH9
3. Micron MT41K256M16HA-125
These alternatives have similar specifications, such as density, timing, and voltage. Always verify compatibility based on specific application requirements.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

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