MT29F512G08AUCBBH8-6IT:B

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MT29F512G08AUCBBH8-6IT:B

IC FLASH 512GBIT PAR 152LBGA

  • Fabricante
  • Mfr. Parte #MT29F512G08AUCBBH8-6IT:B
  • Paquete LBGA-152
  • Hoja de datos
  • En stock7677

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Especificaciones

Package Tray
ProductStatus Obsolete
MemoryType Non-Volatile
MemoryFormat FLASH
Technology FLASH - NAND (SLC)
MemorySize 512Gb (64G x 8)
MemoryInterface Parallel
ClockFrequency 166 MHz
Voltage-Supply 2.7V ~ 3.6V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package/Case 152-LBGA

Descripción general

Description

The MT29F512G08AUCBBH8-6IT:B is a NAND flash memory chip manufactured by Micron Technology. It features a capacity of 512 Gb (64 GB) and utilizes a 3D NAND architecture, which enhances storage density and performance. The "AUCBB" designation indicates it is a BGA (Ball Grid Array) package, designed for high reliability and compact applications.
This memory chip operates with a 1.8V I/O interface, making it suitable for low-power devices. It supports various NAND flash memory protocols for efficient data management and integration into systems like smartphones, tablets, and embedded applications. The chip is designed for high endurance and supports advanced error correction algorithms, ensuring data integrity over its lifespan.
The suffix "-6IT" signifies specific manufacturing characteristics such as temperature range and performance grade, while "B" denotes revision or variant information. Overall, this NAND flash memory component is ideal for high-capacity, performance-sensitive applications.

Features

The MT29F512G08AUCBBH8-6IT:B is a NAND Flash memory chip from Micron Technology, featuring 512 Gb (64 GB) capacity. It utilizes a 3D NAND architecture for enhanced performance and endurance. Key features include:
1. Interface: Supports ONFI (Open NAND Flash Interface) 3.0 for high-speed data transfer.
2. Data Rate: Operates with a read speed of up to 400 MT/s and write speed of up to 200 MT/s.
3. Endurance: Designed for high endurance, typically offering 3,000 program/erase cycles.
4. Reliability: Built-in error correction capabilities enhance data integrity and reliability.
5. Power Consumption: Low power operation, making it suitable for mobile and embedded applications.
6. Package: Available in a compact BGA (Ball Grid Array) package for efficient space utilization.
This NAND Flash is ideal for applications requiring high-density storage, such as smartphones, tablets, and other consumer electronics.

Package

The MT29F512G08AUCBBH8-6IT:B is packaged in a 48-ball FBGA (Fine Ball Grid Array) format. This package type offers a compact design suitable for high-density applications, providing efficient electrical performance and thermal management.

Pinout

The MT29F512G08AUCBBH8-6IT:B is a NAND Flash memory device with a pin count of 63 pins. This device is designed for high-density storage applications and features an 8-bit I/O interface.
Key functions include:
- Data Storage: It provides 512 Gb (Gigabits) of storage capacity.
- Memory Access: Supports asynchronous read, program, and erase operations.
- Control Signals: Pins for command and address inputs, allowing communication with the host controller.
- Power Management: Includes power supply pins for Vcc and ground.
- Data I/O: Data pins (D0-D7) for reading and writing data.
- Status Reporting: Pins for indicating the status of operations and ready/busy conditions.
This NAND Flash device is typically used in applications such as smartphones, tablets, SSDs, and other embedded systems where high capacity and performance are necessary.

Manufacturer

The manufacturer of the MT29F512G08AUCBBH8-6IT:B is Micron Technology, Inc. Micron is an American multinational corporation that specializes in the production of memory and storage solutions, including DRAM, NAND flash memory, and NOR flash memory. Founded in 1978 and headquartered in Boise, Idaho, Micron is one of the largest semiconductor companies in the world. The company serves various markets, including computing, mobile, automotive, and industrial applications. Micron is known for its innovative technologies and plays a crucial role in the development of memory solutions that support advancements in computing and data storage.

Application

The MT29F512G08AUCBBH8-6IT:B is a 512Gb NAND flash memory chip, commonly used in various applications such as mobile devices, consumer electronics, SSDs, industrial automation, automotive systems, and data storage solutions. Its high density and performance make it suitable for applications requiring fast data access and storage, including multimedia devices, computers, and embedded systems.

Equivalent

The MT29F512G08AUCBBH8-6IT:B is a 512Gb NAND Flash memory chip. Equivalent products may include the Samsung K9GAG08U0M, Spansion S34ML08G2, and Toshiba TH58TFT1F2G3LBA. Compatibility may vary based on specific application requirements, such as memory interface and voltage. Always check datasheets for detailed specifications.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

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