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MT29F4G08ABBEAH4-IT:E
IC FLASH 4GBIT PARALLEL 63VFBGA
- Fabricante
- Mfr. Parte #MT29F4G08ABBEAH4-IT:E
- Paquete VFBGA-63
- Hoja de datos
- En stock3216
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Especificaciones
| Package | Bulk |
| ProductStatus | Obsolete |
| MemoryType | Non-Volatile |
| MemoryFormat | FLASH |
| Technology | FLASH - NAND |
| MemorySize | 4Gb (512M x 8) |
| MemoryInterface | Parallel |
| Voltage-Supply | 1.7V ~ 1.95V |
| OperatingTemperature | -40°C ~ 85°C (TA) |
| MountingType | Surface Mount |
| Package/Case | 63-VFBGA |
Descripción general
Description
Key points:
- Density/organization: ~4 Gbit NAND, x8 I/O, multi-plane architecture
- Interface/voltage: ONFI-compatible interface; I/O voltage around 3.3 V (core ≈ 1.8 V)
- Temperature/packaging: IT:E suffix indicates industrial/extended temperature grade
- Operations: standard NAND read, program, and erase at page/block granularity; supports multi-plane and various read modes
- Use: requires a flash controller to manage ECC, bad-block management, and wear leveling
For exact page size, block size, timing, endurance, and electrical specs, consult the MT29F4G08ABBEAH4-IT:E datasheet.
Features
- Capacity: 4 Gbit (512 MB) raw
- Interface: asynchronous, x8 I/O; ONFI-compliant
- Organization: 2 KB pages; typical 128-page blocks (256 KB per block)
- Performance features: multi-plane/multi-bank operation for higher throughput
- Reliability: built-in bad-block management, wear leveling, and ECC support
- ECC: hardware BCH ECC (supports external ECC schemes)
- Endurance/Retention: P/E cycles in the low thousands (ergodic wear with ECC); data retention rated for long-term use
- Voltage/Temp: 3.3V operation; industrial temp range typically -40°C to 85°C
- Packaging: suitable for embedded/SSD applications requiring rugged performance
Note: exact page/Block sizes and endurance can vary by revision; verify the specific datasheet for precise numbers.
Package
Pinout
- Function: 4 Gbit NAND flash memory with a parallel x8 data bus (non-volatile storage; asynchronous NAND interface).
Manufacturer
- What kind of company: An American multinational semiconductor company that designs and manufactures memory and storage products, including DRAM and NAND flash, and is one of the world’s largest memory manufacturers.
Application
- Embedded systems and microcontroller-based devices (industrial control, IoT gateways)
- Automotive and rugged electronics (instrument clusters, infotainment, telematics)
- Consumer electronics (digital cameras, camcorders, portable media players)
- Firmware storage and data logging
- NAND-based storage modules (USB drives, SD/memory cards, small SSD subsystems) for wide-temp environments
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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