MT29F2G08ABBEAHC-IT:E

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MT29F2G08ABBEAHC-IT:E

IC FLASH 2GBIT PARALLEL 63VFBGA

  • Fabricante
  • Mfr. Parte #MT29F2G08ABBEAHC-IT:E
  • Paquete 63-VFBGA (10.5x13)
  • Hoja de datos
  • En stock3681

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Especificaciones

Package Bulk
ProductStatus Active
MemoryType Non-Volatile
MemoryFormat FLASH
Technology FLASH - NAND
MemorySize 2Gb (256M x 8)
MemoryInterface Parallel
Voltage-Supply 1.7V ~ 1.95V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package/Case 63-VFBGA

Descripción general

Description

The MT29F2G08ABBEAHC-IT:E is a NAND flash memory chip produced by Micron Technology. It features a 2-gigabit (256MB) storage capacity and utilizes a 3D NAND architecture, which enhances performance and endurance compared to traditional 2D NAND. This memory device supports various interfaces, including ONFI (Open NAND Flash Interface), allowing for compatibility with multiple host systems.
Designed for industrial applications, the "IT" in the part number indicates that it is intended for industrial temperature ranges, making it suitable for harsh environments. The "E" suffix denotes that it has undergone enhanced testing for reliability.
Key characteristics include fast read and write speeds, low power consumption, and high data retention, making it ideal for applications such as mobile devices, automotive systems, and embedded computing. The MT29F2G08ABBEAHC-IT:E is optimized for performance and durability, ensuring that it meets the demanding requirements of modern electronics.

Features

The MT29F2G08ABBEAHC-IT:E is a NAND flash memory device from Micron Technology, featuring a capacity of 2 Gb (256 MB) and designed for embedded applications. Key features include:
- Organization: 8-bit data I/O with a page size of 2048 bytes and a spare area of 64 bytes.
- Interface: Supports ONFI (Open NAND Flash Interface) for compatibility with various controllers.
- Speed: Offers fast read and write operations, with typical read speeds around 25 ns.
- Endurance: Designed for high endurance with up to 10,000 program/erase cycles per block.
- Temperature Range: Industrial-grade temperature range of -40°C to +85°C, suitable for harsh environments.
- Package: Available in a compact 48-ball BGA (Ball Grid Array) package for space-constrained designs.
- Data Reliability: Features built-in error correction capability and wear leveling to enhance data integrity.
This device is ideal for applications in consumer electronics, automotive, and industrial sectors where reliable data storage is critical.

Package

The MT29F2G08ABBEAHC-IT:E is packaged in a TSOP (Thin Small Outline Package) format. This type of packaging is commonly used for NAND flash memory devices, providing a compact and efficient form factor for integration into various electronic applications.

Pinout

The MT29F2G08ABBEAHC-IT:E is a NAND Flash memory chip manufactured by Micron Technology. It features a pin count of 48 pins. The primary functions of this device include:
1. Memory Storage: It provides 2 Gigabits of NAND Flash memory for data storage applications.
2. Data Interface: The chip interfaces with host controllers using the ONFI (Open NAND Flash Interface) standard for high-speed data transfer.
3. Read/Write Operations: It supports various read and write operations, including page reads, program operations, and block erases.
4. Block Management: The device includes built-in features for error correction and bad block management.
5. Power Management: It operates at different voltage levels and supports power-saving modes.
The MT29F2G08ABBEAHC-IT:E is typically used in consumer electronics, mobile devices, and embedded systems.

Manufacturer

The manufacturer of the MT29F2G08ABBEAHC-IT:E is Micron Technology, Inc. Micron is a global leader in the semiconductor industry, specializing in memory and storage solutions, including DRAM, NAND flash memory, and STORAGE products. Founded in 1978 and headquartered in Boise, Idaho, Micron serves a wide range of markets, including computing, mobile, automotive, and enterprise storage. The company is known for its innovation in memory and storage technologies, contributing significantly to advancements in data processing and storage solutions.

Application

The MT29F2G08ABBEAHC-IT:E is a NAND Flash memory device commonly used in applications such as smartphones, tablets, and other portable electronics for data storage. It's also utilized in automotive systems, industrial applications, and consumer electronics for firmware storage, data logging, and embedded systems, due to its high density, reliability, and durability in various environments.

Equivalent

The MT29F2G08ABBEAHC-IT:E chip is a 2Gb NAND Flash memory. Equivalent products include:
1. Samsung K9GAG08U0M
2. Hynix H26M21001B4M
3. Micron MT29F2G08ABAEAWP
Always verify compatibility in terms of specifications and interfaces before substitution.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

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