MT29F2G08ABAEAH4-IT:E

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MT29F2G08ABAEAH4-IT:E

IC FLASH 2GBIT PARALLEL 63VFBGA

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  • Mfr. Parte #MT29F2G08ABAEAH4-IT:E
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  • En stock5694

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Especificaciones

Part Status Last Time Buy
Base Product Number MT29F2G08
DigiKey Programmable Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 2Gbit
Memory Organization 256M x 8
Memory Interface Parallel
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package 63-VFBGA
Supplier Device Package 63-VFBGA (9x11)
Packaging Tray

Descripción general

Description

The MT29F2G08ABAEAH4-IT:E is a NAND Flash memory device manufactured by Micron Technology. It features a 2Gb (gigabit) capacity and is part of the 29F family of NAND products. This device is designed for various applications, including mobile devices, consumer electronics, and automotive systems, providing high-density storage with reliable performance.
Key features include a 1.8V supply voltage, support for SLC (Single-Level Cell) and MLC (Multi-Level Cell) operations, and advanced error correction capabilities. The "IT" in the part number indicates that it is intended for industrial temperatures, making it suitable for demanding environments.
This NAND Flash also supports an ONFI (Open NAND Flash Interface) standard, allowing for compatibility with various host systems. The "E" at the end of the part number indicates that it is a lead-free, environmentally friendly product.
Overall, the MT29F2G08ABAEAH4-IT:E provides a reliable and efficient solution for high-capacity storage needs in a wide range of applications.

Features

The MT29F2G08ABAEAH4-IT:E is a NAND Flash memory device from Micron Technology, designed for high-density storage applications. Key features include:
1. Density: 2 Gbit (256 MB) of memory capacity.
2. Architecture: SLC (Single-Level Cell) technology, providing high reliability and performance.
3. Interface: ONFI (Open NAND Flash Interface) compliant, ensuring compatibility with various controllers.
4. Speed: Supports fast read and write speeds, enhancing data transfer efficiency.
5. Endurance: Designed for high endurance with numerous program/erase cycles, making it suitable for demanding applications.
6. Power Supply: Operates at a standard voltage for low power consumption, ideal for mobile and portable devices.
7. Package: Available in a compact BGA (Ball Grid Array) form factor, facilitating space-saving designs.
Overall, the MT29F2G08ABAEAH4-IT:E is optimal for applications requiring reliable, high-performance storage solutions, such as embedded systems and consumer electronics.

Package

The MT29F2G08ABAEAH4-IT:E is a NAND Flash memory device packaged in a TSOP (Thin Small Outline Package) type. It features a compact design suitable for applications requiring high-density memory solutions.

Pinout

The MT29F2G08ABAEAH4-IT:E is a NAND flash memory device with a pin count of 48 pins. It is designed for mobile and embedded applications, providing high-density storage. The primary functions of its pins include data input/output, chip enable, write enable, read enable, and various control signals essential for communication and operation. Additionally, it features power supply pins for Vcc and ground, along with configuration and status pins. This device supports a range of operations such as read, write, and erase, making it suitable for applications requiring reliable and efficient flash memory solutions.

Manufacturer

The manufacturer of the MT29F2G08ABAEAH4-IT:E is Micron Technology, Inc. Micron is a globally recognized leader in the semiconductor industry, specializing in memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron produces a range of products, including DRAM, NAND flash memory, and other memory technologies. The company serves various markets such as computing, mobile devices, automotive, and consumer electronics. Micron is known for its innovation and commitment to advancing memory technology to meet the growing demands of data-intensive applications.

Application

The MT29F2G08ABAEAH4-IT:E is a 2Gb NAND flash memory chip, commonly used in various applications such as smartphones, tablets, digital cameras, and automotive systems. It supports data storage for multimedia content, firmware, and application files. Its features make it suitable for consumer electronics, industrial devices, and portable storage solutions, providing high performance and reliability in data-intensive environments.

Equivalent

The MT29F2G08ABAEAH4-IT:E is a 2Gb NAND Flash memory chip. Equivalent products include:
1. Micron MT29F2G08ABAEAWP
2. Samsung K9GAG08U0M
3. Hynix H27UBG8T2BTR
4. Toshiba TH58TEG7D2LBA
Always check specifications such as packaging, voltage, and interface compatibility before substitution.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

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