MT29F256G08CJABBWP-12IT:B

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MT29F256G08CJABBWP-12IT:B

IC FLASH 256GBIT PAR 48TSOP I

  • Fabricante
  • Mfr. Parte #MT29F256G08CJABBWP-12IT:B
  • Paquete 48-TFSOP
  • Hoja de datos
  • En stock5359

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Especificaciones

Package Tray
ProductStatus Obsolete
MemoryType Non-Volatile
MemoryFormat FLASH
Technology FLASH - NAND (MLC)
MemorySize 256Gb (32G x 8)
MemoryInterface Parallel
ClockFrequency 83 MHz
Voltage-Supply 2.7V ~ 3.6V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package/Case 48-TFSOP (0.724, 18.40mm Width)

Descripción general

Description

The MT29F256G08CJABBWP-12IT:B is a NAND flash memory device manufactured by Micron Technology. It features a storage capacity of 256 gigabits (32 gigabytes) and is designed for various applications, including mobile devices, consumer electronics, and industrial systems. This device utilizes a 3D NAND architecture, enhancing performance, endurance, and efficiency in data storage.
Key specifications include a 1.8V power supply, which contributes to lower power consumption, making it suitable for battery-operated devices. The interface is compatible with ONFI standards, ensuring easy integration into existing systems. Additionally, the device supports advanced features such as wear leveling and error correction, which enhance data integrity and longevity.
This memory component is part of Micron's broader lineup of memory solutions and is optimized for high-speed data transfer and reliability, making it a preferred choice for engineers and developers looking for robust storage solutions.

Features

The MT29F256G08CJABBWP-12IT:B is a NAND Flash memory chip from Micron Technology, designed for high-capacity storage applications. Key features include:
1. Density: 256 Gb (32 GB) of storage capacity.
2. Interface: Supports an ONFI 2.3 interface for high-speed data transfer.
3. Page Size: 8 KB page size, with support for multiple plane operations to enhance performance.
4. Block Size: Contains blocks of 128 KB, facilitating efficient management of memory space.
5. Endurance: Designed for high endurance, with up to 3,000 program/erase cycles.
6. Data Retention: Offers data retention of up to 10 years.
7. Voltage: Operates at a supply voltage of 2.7V to 3.6V.
8. Temperature Range: Commercial temperature range of 0°C to 70°C.
9. Form Factor: Available in a 48-ball FBGA package, suitable for compact designs.
These features make it ideal for applications like smartphones, tablets, and SSDs, where high performance and reliability are crucial.

Package

The MT29F256G08CJABBWP-12IT:B is packaged in a FBGA (Fine Ball Grid Array) format. This type of package is compact and suitable for high-density applications, allowing for efficient thermal and electrical performance.

Pinout

The MT29F256G08CJABBWP-12IT:B is a NAND flash memory chip with a pin count of 48 pins. It features a 2-bit ECC (Error Correction Code) and operates on a supply voltage of 1.7V to 1.95V. The chip is designed for high-density storage applications, providing 256 Gbit of memory capacity.
Key functions include data storage, read, write, and erase operations, as well as support for various interface protocols, including ONFI (Open NAND Flash Interface). The device is commonly used in consumer electronics, mobile devices, and solid-state drives (SSDs) due to its low power consumption and high performance.
Additionally, it includes features for wear leveling and bad block management to enhance reliability and lifespan.

Manufacturer

The manufacturer of the MT29F256G08CJABBWP-12IT:B is Micron Technology, Inc. Micron is a global leader in the semiconductor industry, specializing in memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron produces a wide range of products, including DRAM, NAND flash memory, and solid-state drives (SSDs). The company serves various markets, including consumer electronics, computing, mobile devices, and enterprise storage, making it a key player in advancing technology and innovation in data storage and memory products. Micron is publicly traded on the NASDAQ under the ticker symbol MU.

Application

The MT29F256G08CJABBWP-12IT:B is a NAND flash memory device commonly used in various applications, including smartphones, tablets, embedded systems, industrial equipment, automotive electronics, and consumer electronics. Its high density and reliability make it suitable for data storage, firmware updates, and multimedia applications, providing efficient performance in environments requiring durable and non-volatile memory solutions.

Equivalent

The MT29F256G08CJABBWP-12IT:B is a 256Gb NAND Flash memory chip. Equivalent products include:
1. Samsung K9GAG08U0M - 256Gb NAND Flash
2. SK Hynix H26M64003GTR - 256Gb NAND Flash
3. Toshiba TH58TFT1D4JBA - 256Gb NAND Flash
Always verify compatibility based on your specific application requirements.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

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