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MT29F1G08ABAEAH4-ITX:E
IC FLASH 1GBIT PARALLEL 63VFBGA
- Fabricante
- Mfr. Parte #MT29F1G08ABAEAH4-ITX:E
- Paquete
- Hoja de datos
- En stock7505
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Especificaciones
| Part Status | Obsolete |
| Base Product Number | MT29F1G08 |
| DigiKey Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 1Gbit |
| Memory Organization | 128M x 8 |
| Memory Interface | Parallel |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package | 63-VFBGA |
| Supplier Device Package | 63-VFBGA (9x11) |
| Packaging | Tray |
Descripción general
Description
This NAND flash is commonly used in consumer electronics, mobile devices, and embedded systems due to its efficient performance and reliability. The "ITX" designation indicates its industrial-grade rating, making it suitable for harsh environments. Additionally, the "E" at the end signifies that it is compatible with environmentally friendly manufacturing processes.
Key features include robust error correction capabilities, low power consumption, and support for various programming and erase operations. The device is organized in a page format, enabling efficient data management and retrieval. Overall, the MT29F1G08ABAEAH4-ITX:E provides a versatile and reliable memory solution for a wide range of applications.
Features
- Technology: NAND Flash, providing non-volatile storage.
- Density: 1 Gb capacity, suitable for data storage needs.
- Interface: Toggle DDR (Double Data Rate) interface, allowing for high-speed data transfer.
- Cell Type: SLC (Single-Level Cell) design, which offers high performance and endurance compared to MLC (Multi-Level Cell) NAND.
- Package: Available in a compact BGA (Ball Grid Array) package, facilitating space-efficient designs.
- Operating Voltage: Typically operates at 2.7V to 3.6V, ensuring compatibility with various systems.
- Endurance: High program/erase cycles, making it suitable for demanding applications.
Overall, the MT29F1G08ABAEAH4-ITX:E combines reliability, efficiency, and performance for modern storage solutions.
Package
Pinout
The key functions of the pins include:
1. Data I/O Pins: These are used for data transfer (D0-D7).
2. Command Pins: Such as WE (Write Enable), RE (Read Enable), and CE (Chip Enable) to manage read and write operations.
3. Address Pins: Used for addressing memory locations during read and write operations.
4. Control Pins: Includes R/B (Ready/Busy), which signals the status of the device during operations.
5. Power Pins: For supply and ground connections (Vcc, Vss).
This device is typically used in applications requiring high-density storage, such as smartphones, tablets, and embedded systems.
Manufacturer
Application
Equivalent
1. Samsung K9GAG08U0M - 1Gb NAND Flash
2. Toshiba TH58NVG1S3F - 1Gb NAND Flash
3. SK Hynix H27UCG8T2A - 1Gb NAND Flash
Ensure to verify the specifications and compatibility for your specific application.
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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