MT29F1G08ABAEAH4-AITX:E

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MT29F1G08ABAEAH4-AITX:E

IC FLASH 1GBIT PARALLEL 63VFBGA

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Especificaciones

Part Status Obsolete
DigiKey Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 1Gbit
Memory Organization 128M x 8
Memory Interface Parallel
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 63-VFBGA
Supplier Device Package 63-VFBGA (9x11)
Base Product Number MT29F1G08

Descripción general

Description

The MT29F1G08ABAEAH4-AITX:E is a NAND flash memory device produced by Micron Technology. It features a storage capacity of 1 gigabit (1Gbit) and is designed for use in various applications, including mobile devices, consumer electronics, and industrial products. This NAND flash memory is built using advanced manufacturing processes, ensuring high performance and reliability.
Key features include a toggle-mode interface, which allows for faster data transfer rates compared to traditional NAND interfaces. It supports multiple read and write modes, enhancing flexibility in data handling. The device is optimized for low power consumption, making it suitable for battery-operated devices.
The "E" at the end of the part number indicates that it complies with the RoHS directive, ensuring it is free from hazardous substances. Overall, the MT29F1G08ABAEAH4-AITX:E is a versatile solution for non-volatile storage needs, offering a balance of speed, efficiency, and reliability.

Features

The MT29F1G08ABAEAH4-AITX:E is a NAND flash memory chip from Micron Technology. It is a 1Gb (1 gigabit) NAND flash device with the following key features:
1. Type: SLC (Single-Level Cell) NAND, offering high performance and reliability.
2. Interface: It utilizes the ONFI (Open NAND Flash Interface) protocol, ensuring compatibility with a range of applications.
3. Package: Comes in a TSOP (Thin Small Outline Package) form factor, making it suitable for space-constrained applications.
4. Density: 1Gb capacity, suitable for embedded applications requiring efficient data storage.
5. Performance: Supports high-speed read and write operations, enhancing overall system performance.
6. Endurance and Reliability: Designed for high endurance, it supports numerous program/erase cycles, ideal for applications demanding reliability.
7. Temperature Range: Suitable for industrial applications with an extended temperature range.
This device is commonly used in consumer electronics, embedded systems, and industrial applications where performance and reliability are critical.

Package

The MT29F1G08ABAEAH4-AITX:E is packaged in a TSOP (Thin Small Outline Package), which is a surface-mount package designed for memory devices. This type of packaging is compact, facilitating space-efficient designs in electronic applications.

Pinout

The MT29F1G08ABAEAH4-AITX:E is a NAND flash memory device with a pin count of 48 pins. It is designed for mobile and embedded applications. The key functions of its pins include:
1. Data Pins (DQ0-DQ7): These 8 pins are used for bi-directional data transfer.
2. Command/Address (A0-A3, CE#, RE#, WE#, ALE, CLE): These pins handle address and command inputs to control read/write operations.
3. Chip Enable (CE#): Activates the chip for operations.
4. Read Enable (RE#): Initiates read operations.
5. Write Enable (WE#): Initiates write operations.
6. Address Latch Enable (ALE): Latches the address.
7. Command Latch Enable (CLE): Latches command inputs.
8. Ready/Busy (R/B): Indicates the device status.
9. Ground (VSS) and Power Supply (VCC): Provide power and ground connections.
This device is typically used for data storage in consumer electronics, automotive applications, and industrial devices.

Manufacturer

The manufacturer of the MT29F1G08ABAEAH4-AITX:E is Micron Technology, Inc. Micron is an American multinational corporation that specializes in semiconductor technology, particularly memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron produces a variety of products, including DRAM, NAND flash memory, and solid-state drives (SSDs). The company serves various industries, including consumer, enterprise, and automotive sectors, and is known for its innovations in memory technology. Micron is one of the largest memory manufacturers in the world and plays a significant role in the global semiconductor supply chain.

Application

The MT29F1G08ABAEAH4-AITX:E is a NAND flash memory device primarily used in applications such as smartphones, tablets, consumer electronics, and automotive systems. Its high-density storage capabilities make it suitable for data-intensive applications, including multimedia storage, firmware updates, and embedded systems. The device is also utilized in industrial applications for data logging and wear leveling, ensuring reliable performance in various environments.

Equivalent

The MT29F1G08ABAEAH4-AITX:E chip is a 1Gb NAND flash memory device. Equivalent products include the Micron MT29F1G08ABAEAWP, Samsung K9GAG08U0M, and Toshiba TH58NVG5D2GLA. Always verify specifications and compatibility before substitution as they may differ in performance and functionalities.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria