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MT29C4G48MAAGBBAKS-48 IT
Multichip Packages MASSFLASH/MOBILE DDR 6G
- Fabricante
- Mfr. Parte #MT29C4G48MAAGBBAKS-48 IT
- Paquete
- Hoja de datos
- En stock21121
100% original & Nuevo
24 horas listos para el envío
Garantía de 365 días
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Especificaciones
| Packaging | Tray |
| Standard Pack Qty | 1140 |
Descripción general
Description
Key features include support for DDR3 (Double Data Rate 3) technology, allowing for faster data transfer rates, and a low voltage operation that enhances battery life in mobile applications. The "IT" designation indicates that it is part of the industrial temperature range series, meaning it can operate effectively in a wider range of temperatures, which is crucial for devices exposed to varying environmental conditions. Overall, the MT29C4G48MAAGBBAKS-48 IT is ideal for modern mobile systems requiring efficient and reliable memory solutions.
Features
1. Type: DDR3 SDRAM, which provides higher data transfer rates compared to DDR2.
2. Capacity: 4 Gb, suitable for applications requiring moderate memory density.
3. Data Rate: Typically operates at 1600 MT/s (mega-transfers per second).
4. Organization: It has a 8-bit wide I/O interface, allowing for efficient data handling.
5. Packaging: Available in a 78-ball BGA (Ball Grid Array) package, facilitating high-density mounting on PCBs.
6. Voltage: Operates at a low voltage of 1.5V, enhancing power efficiency.
7. Features: Supports various advanced features such as self-refresh, burst mode, and on-die termination.
This memory chip is primarily used in mobile devices, laptops, and other electronics requiring compact and efficient memory solutions.
Package
Pinout
Pin count: 48 pins.
Functions:
- The pins provide various functionalities including data input/output, addressing, control signals, and power supply connections.
- Key pins include:
- Data Pins (DQ): Used for data transfer.
- Address Pins (A): Used for selecting memory locations.
- Control Pins (CK, CK#, CS#, RAS#, CAS#, WE#): Manage the read/write operations and timing.
- Power Pins (VDD, VSS): Provide power to the chip.
This memory is designed for high-performance applications, supporting features like burst access and low power consumption, suitable for mobile devices and other computing applications.
Manufacturer
Application
Equivalent
1. Hynix H5TQ4G63AFR
2. Samsung K4B4G1646F
3. Micron MT41K256M16HA-125
4. Nanya NT4GC64B4HB-18
Ensure compatibility with your specific application requirements before selecting an equivalent.
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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