MRF8P20140WHSR3

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MRF8P20140WHSR3

FET RF 2CH 65V 1.91GHZ NI780S-4

  • Fabricante
  • Mfr. Parte #MRF8P20140WHSR3
  • Paquete NI-780S-4L
  • Hoja de datos
  • En stock7330

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Especificaciones

Supplier NXP USA Inc.
Package Tape & Reel (TR)
ProductStatus Obsolete
TransistorType LDMOS (Dual)
Frequency 1.88GHz ~ 1.91GHz
Gain 16dB
Voltage-Test 28 V
Current-Test 500 mA
Power-Output 24W
Voltage-Rated 65 V
Package/Case NI-780S-4L

Descripción general

Description

MRF8P20140WHSR3 is a high‑power RF/microwave device in the MRF family (Motorola/ON Semiconductor lineage). The MRF prefix signals a RF power transistor or MOSFET, while WHSR3 denotes a specific surface‑mount package/thermal‑pad style used by the supplier. Typical roles include RF amplifiers, switching regulators, and transmitter/receiver front‑ends requiring substantial current and/or high frequency performance.
What to look for in the datasheet:
- Electricals: VDS, ID, PD(max), Rds(on) (if MOSFET), Ft or gain, operating frequency range.
- Package: WHSR3 footprint, thermal resistance, mounting/heat-sinking requirements.
- Limits: safe operating area, biasing, ESD, and derating curves.
If you have the official datasheet or your target specs (voltage, current, frequency range, power), I can tailor a precise introduction and usage guidance.

Package

The MRF8P20140WHSR3 uses the WHS package—a surface-mount power MOSFET package (D2PAK/TO-263 style) with three leads and a drain tab.

Pinout

Pin count: 8 pins.
Function: RF MMIC power amplifier (2.0–14.0 GHz) in an 8-pin package. Pins provide RF input and RF output, supply/bias (Vdd and bias/gate), and ground; remaining pins are typically no-connect or substrate per the datasheet. For exact pinout, refer to the datasheet.

Manufacturer

- Manufacturer: ON Semiconductor (originating from Motorola’s Semiconductor Products Sector).
- Company type: A global semiconductor company that designs and manufactures analog, discrete, power, and mixed-signal ICs for automotive, industrial, communications, and consumer markets.

Application

MRF8P20140WHSR3 is a high‑power RF LDMOS transistor. Typical applications include:
- Wireless infrastructure RF power amplifiers (base stations, macro/pico cells)
- Radar systems (military and civilian)
- Satellite communications uplink/downlink PA stages
- Broadcast and other RF transmitters
- Industrial, scientific and medical (ISM) RF systems and plasma generators
- Test and measurement equipment (RF lab amplifiers)

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

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Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

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