MMBTA42LT1G

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MMBTA42LT1G

TRANS NPN 300V 0.5A SOT23-3

  • Fabricante
  • Mfr. Parte #MMBTA42LT1G
  • Paquete SOT23-3
  • Hoja de datos
  • En stock2944

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Especificaciones

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
TransistorType NPN
Current-Collector(Ic)(Max) 500 mA
Voltage-CollectorEmitterBreakdown(Max) 300 V
VceSaturation(Max)@IbIc 500mV @ 2mA, 20mA
Current-CollectorCutoff(Max) 100nA (ICBO)
DCCurrentGain(hFE)(Min)@IcVce 40 @ 30mA, 10V
Power-Max 225 mW
Frequency-Transition 50MHz
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-236-3, SC-59, SOT-23-3

Descripción general

Description

The MMBTA42LT1G is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various power management applications. It features low on-resistance and fast switching capabilities, making it suitable for use in switching power supplies, DC-DC converters, and motor control circuits.
This device is characterized by its high breakdown voltage, which allows it to handle substantial voltage levels, and its high current rating, enabling it to support demanding load conditions. The MMBTA42LT1G is encapsulated in a compact SOT-23 package, facilitating easy integration into circuit designs with limited space.
Overall, its efficiency and reliability, combined with its thermal performance, make the MMBTA42LT1G a popular choice for engineers seeking effective solutions in modern electronic systems.

Features

The MMBTA42LT1G is a N-channel MOSFET designed for low voltage, high-speed switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: It supports a continuous drain current (I_D) of up to 2.2A, allowing it to handle moderate power levels.
3. Low R_DS(on): The on-resistance is typically low, around 0.18 ohms at V_GS = 10V, which helps reduce power loss and improve efficiency.
4. Fast Switching Speed: It features fast turn-on and turn-off characteristics, making it ideal for high-frequency applications.
5. Thermal Performance: With a maximum junction temperature of 150°C, it offers robust thermal stability.
6. Package Type: It comes in a compact SOT-223 package, facilitating space-saving designs.
These features make the MMBTA42LT1G suitable for applications in power management, motor control, and lighting systems.

Package

The MMBTA42LT1G is packaged in a SOT-23 surface-mount package.

Pinout

The MMBTA42LT1G is a NPN bipolar junction transistor (BJT) housed in a surface-mount SOT-23 package. It has three pins.
Pin Functions:
1. Base (B): This is the control pin where the input signal is applied, allowing the transistor to switch or amplify currents.
2. Collector (C): This pin is connected to the load; it is where the output current flows when the transistor is in the 'on' state.
3. Emitter (E): This pin allows the current to exit the transistor, typically connected to ground in a common-emitter configuration.
The device is utilized in various applications, including signal amplification and switching circuits.

Manufacturer

The MMBTA42LT1G is manufactured by ON Semiconductor, a global company that specializes in semiconductor components. ON Semiconductor provides a wide range of products, including power management, analog, and logic devices, as well as sensors and connectivity solutions. The company serves various industries, including automotive, industrial, communications, consumer electronics, and computing. Founded in 1999 and headquartered in Phoenix, Arizona, ON Semiconductor focuses on energy-efficient solutions and innovation in semiconductor technology, aiming to support the growing demand for advanced electronic devices.

Application

MMBTA42LT1G is a N-channel MOSFET used in various applications, including power management, switching power supplies, motor control, and load switching. Its low on-resistance and high-speed switching capabilities make it suitable for automotive, industrial, and consumer electronics applications, facilitating efficient energy conversion and thermal management.

Equivalent

The MMBTA42LT1G is a NPN bipolar junction transistor (BJT) designed for low power switching and amplification. Equivalent products include the 2N4401, 2N2222, and BC547. However, ensure to check the specifications such as voltage, current ratings, and package type before replacement, as they may vary slightly.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

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Actualmente, solo aceptamos los siguientes métodos de pago:

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2. Tarjeta de crédito/débito

3. Transferencia bancaria

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