MMBT5551LT1G

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MMBT5551LT1G

TRANS NPN 160V 0.6A SOT23-3

  • Fabricante
  • Mfr. Parte #MMBT5551LT1G
  • Paquete SOT23-3
  • Hoja de datos
  • En stock5527

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Especificaciones

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
TransistorType NPN
Current-Collector(Ic)(Max) 600 mA
Voltage-CollectorEmitterBreakdown(Max) 160 V
VceSaturation(Max)@IbIc 200mV @ 5mA, 50mA
Current-CollectorCutoff(Max) 100nA
DCCurrentGain(hFE)(Min)@IcVce 80 @ 10mA, 5V
Power-Max 225 mW
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-236-3, SC-59, SOT-23-3

Descripción general

Description

The MMBT5551LT1G is a general-purpose NPN transistor designed for low-power switching and amplification applications. It is part of the MMBT5551 series, which is known for its efficiency in handling medium voltage and current. This transistor typically features a maximum collector-emitter voltage (Vce) of around 50V and a maximum collector current (Ic) of about 600mA.
The "LT" in its designation indicates that it comes in a low-profile SOT-23 package, making it suitable for space-constrained applications. It has a high current gain (β), providing good amplification properties. The MMBT5551LT1G is suitable for a variety of applications, including signal amplification, level shifting, and driving small loads in consumer electronics and industrial devices.
It’s commonly used in various circuit designs where reliability and performance are critical. Overall, the MMBT5551LT1G is valued for its versatility, compact size, and robust performance in electronic circuits.

Features

The MMBT5551LT1G is a NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Key features include:
1. High Voltage Rating: It supports a collector-emitter voltage (Vce) of up to 50V, making it suitable for various applications.
2. Current Rating: The maximum continuous collector current (Ic) is 600mA, allowing for significant load handling.
3. Power Dissipation: It has a power dissipation capability of 500mW, providing efficient thermal management.
4. Transition Frequency: With a transition frequency (fT) of 150MHz, it is effective for high-frequency applications.
5. Package Type: Available in a small SOT-23 package, facilitating compact designs.
6. Sensitivity: Offers high gain (hFE) in the range of 100 to 300, depending on the collector current.
7. Temperature Range: Operates effectively across a temperature range of -55°C to 150°C.
These features make the MMBT5551LT1G versatile for applications in audio, RF, and signal processing circuits.

Package

The MMBT5551LT1G is typically packaged in a SOT-23 (Small Outline Transistor) package type. This surface-mount package is designed for space-saving applications in electronic circuits.

Pinout

The MMBT5551LT1G is a NPN bipolar junction transistor (BJT) typically used for general-purpose amplification and switching applications. It is packaged in a SOT-23 surface mount package, which has a pin count of three.
Pin Functions:
1. Emitter (E) - Pin 1: This terminal is connected to the emitter of the transistor, where current exits.

2. Base (B) - Pin 2: This is the base terminal, responsible for controlling the transistor's operation. A small current applied here allows a larger current to flow from collector to emitter.
3. Collector (C) - Pin 3: This is the collector terminal, where the current enters the transistor.
The MMBT5551LT1G is suitable for use in a variety of electronic circuits, providing efficiency and compactness in design.

Manufacturer

The MMBT5551LT1G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in a wide range of products, including analog, digital, and power management integrated circuits, as well as discrete semiconductors. The company serves various industries, including automotive, industrial, communications, computing, and consumer electronics. ON Semiconductor is known for its focus on energy-efficient solutions and innovative technologies that support the growing demand for smart and connected devices.

Application

The MMBT5551LT1G is a NPN bipolar junction transistor primarily used in switching and amplification applications. It is suitable for medium power switching applications, signal amplification in audio and RF circuits, and general-purpose electronic devices. Its high voltage and current handling capabilities make it ideal for use in consumer electronics, automotive applications, and industrial control systems.

Equivalent

The MMBT5551LT1G is a NPN bipolar junction transistor (BJT) commonly used for low-power switching and amplification. Equivalent products include the 2N5551, BC337, and MMBT5551, among others. For specific applications, verify electrical characteristics such as Vce, Ic, and hFE to ensure compatibility. Always check manufacturer datasheets for precise specifications.

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