MJB45H11T4G

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MJB45H11T4G

TRANS PNP 80V 10A D2PAK

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Especificaciones

Part Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 10 A
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
Current - Collector Cutoff (Max) 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A, 1V
Power - Max 2 W
Frequency - Transition 40MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Base Product Number MJB45

Descripción general

Description

MJB45H11T4G is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-speed switching applications. It features low on-resistance, allowing for efficient operation with minimal power loss. This device is commonly used in power management, motor control, and DC-DC converters due to its ability to handle significant currents and voltages.
Key specifications include a maximum drain-source voltage (V_DS) of 45V and a continuous drain current (I_D) of about 11A, making it suitable for various electronic applications. The MOSFET is housed in a TO-220 package, which aids in thermal dissipation.
MJB45H11T4G is characterized by fast switching speeds, which enhances the performance of circuits where rapid turn-on and turn-off are crucial. Its robust construction ensures reliability in demanding environments. When using this MOSFET, proper heat management and circuit design practices should be followed to optimize performance and longevity.

Features

The MJB45H11T4G is an N-channel MOSFET designed for high-efficiency switching applications. Key features include:
- Voltage Rating: It has a maximum drain-source voltage (Vds) of 45V, making it suitable for medium voltage applications.
- Current Rating: Supports continuous drain current (Id) of up to 10A, enabling effective handling of power in various circuits.
- Rds(on): Low on-resistance (Rds(on)) typically around 0.1Ω, which helps minimize power loss during operation.
- Gate Threshold Voltage: The gate-source threshold voltage (Vgs(th)) ranges from 1V to 3V, allowing for easy driving with low gate voltage.
- Package Type: Available in a TO-220 package, offering good thermal performance and ease of heat sinking.
- Fast Switching: Suitable for applications requiring rapid switching, enhancing performance in power management, motor control, and DC-DC converters.
These features make the MJB45H11T4G a versatile choice for designers seeking reliable MOSFET performance in various electronic applications.

Package

The MJB45H11T4G is a NPN power transistor packaged in a TO-220 style package. This packaging allows for efficient heat dissipation and is commonly used in power applications.

Pinout

The MJB45H11T4G is a power transistor in a TO-220 package, typically used for switching and amplification applications. It features a total of three pins. The pinout is as follows:
1. Base (B) - This pin is used for controlling the transistor. A small current flowing into the base allows a larger current to flow between the collector and emitter.
2. Collector (C) - This pin is where the main current enters the transistor. It connects to the load.
3. Emitter (E) - This pin is where the current exits the transistor, often connected to ground in switching applications.
The MJB45H11T4G is designed for high-speed switching and can handle high voltages and currents, making it suitable for various electronic applications.

Manufacturer

The MJB45H11T4G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in providing a wide range of semiconductor solutions, including power management, analog, and digital devices. They cater to various industries such as automotive, industrial, consumer electronics, and communications. The company focuses on energy-efficient technologies and is known for its innovation in the field of semiconductor manufacturing.

Application

The MJB45H11T4G is a Power MOSFET used in various applications, including power management, switching power supplies, DC-DC converters, and motor control circuits. It is suitable for use in automotive, industrial, and consumer electronics due to its high efficiency and thermal performance. Its low on-resistance and fast switching capabilities make it ideal for applications requiring efficient power conversion and reliable operation.

Equivalent

The MJB45H11T4G is a NPN power transistor. Equivalent products include:
1. MJE2955T
2. TIP31C
3. TIP42C
4. BD139
5. 2N3055
Ensure to check the specifications, such as voltage, current ratings, and packaging, to confirm compatibility for your specific application.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

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3. Transferencia bancaria

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