MBT3904DW1T1G

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MBT3904DW1T1G

TRANS 2NPN 40V 0.2A SC88/SC70-6

  • Fabricante
  • Mfr. Parte #MBT3904DW1T1G
  • Paquete SC-88-6
  • Hoja de datos
  • En stock5580

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Especificaciones

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
TransistorType 2 NPN (Dual)
Current-Collector(Ic)(Max) 200mA
Voltage-CollectorEmitterBreakdown(Max) 40V
VceSaturation(Max)@IbIc 300mV @ 5mA, 50mA
DCCurrentGain(hFE)(Min)@IcVce 100 @ 10mA, 1V
Power-Max 150mW
Frequency-Transition 300MHz
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 6-TSSOP, SC-88, SOT-363

Descripción general

Description

The MBT3904DW1T1G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low voltage and high-speed switching applications. It features a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 1.5A. The device is suitable for various applications, including power management, load switching, and signal amplification.
One of the key advantages of the MBT3904DW1T1G is its low on-resistance (R_DS(on)), which helps minimize power losses during operation. This makes it an efficient choice for battery-powered devices and energy-sensitive applications. It comes in a surface-mount package, facilitating compact designs and ease of integration into printed circuit boards (PCBs).
The transistor can be driven directly by low-voltage logic signals, making it versatile for both analog and digital circuits. Overall, the MBT3904DW1T1G is a reliable and efficient component ideal for modern electronic devices requiring efficient switching performance.

Features

The MBT3904DW1T1G is a NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. Key features include:
1. Type: NPN transistor.
2. Package: SOT-23, making it suitable for surface-mounted applications.
3. Max Collector-Emitter Voltage (Vce): 40V, offering a robust operating range.
4. Max Collector Current (Ic): 200mA, allowing for moderate current handling.
5. Gain (hFE): Typically 100 to 300 at a collector current of 10mA, providing good amplification.
6. Transition Frequency (fT): 100MHz, enabling high-frequency applications.
7. Operating Temperature Range: -55°C to +150°C, ensuring reliability in diverse environments.
8. Low Saturation Voltage: Enhances efficiency in switching applications.
These features make the MBT3904DW1T1G suitable for a variety of electronic uses, including signal amplification and digital switching circuits.

Package

The MBT3904DW1T1G is typically packaged in a SOT-23 (Small Outline Transistor) package. This surface-mount package is compact, making it suitable for space-constrained applications.

Pinout

The MBT3904DW1T1G is a NPN bipolar junction transistor (BJT) housed in a SOT-23 package. It has a total of 3 pins.
Pin Configuration:
1. Emitter (E) - This is the pin where current exits the transistor.
2. Base (B) - This pin controls the transistor and is where the input signal is applied.
3. Collector (C) - This is the pin where current enters the transistor.
Function:
The MBT3904 is commonly used for low to moderate power switching and amplification applications. It is suitable for general-purpose amplification and switching in electronic circuits. The NPN configuration allows the transistor to conduct when a positive voltage is applied to the base relative to the emitter, enabling control of the current flowing from the collector to the emitter.

Manufacturer

The manufacturer of the MBT3904DW1T1G is ON Semiconductor. ON Semiconductor is a multinational semiconductor manufacturer that specializes in designing and manufacturing a wide range of semiconductor components, including power management, analog, and digital devices. The company serves various industries such as automotive, industrial, consumer electronics, and communications. Established in 1999, ON Semiconductor has grown through acquisitions and focuses on providing innovative solutions to meet the demands of modern electronic applications.

Application

The MBT3904DW1T1G is a NPN bipolar junction transistor commonly used in low-power switching and amplification applications. Its primary areas include signal amplification in audio and RF applications, switching circuits, and general-purpose electronics. It is also suitable for use in low-voltage and medium-frequency applications, such as consumer electronics, automotive systems, and signal processing devices.

Equivalent

The MBT3904DW1T1G is a NPN bipolar junction transistor (BJT) commonly used in switching and amplification applications. Equivalent products include:
1. 2N3904
2. BC547
3. S9013
4. MMBT3904
5. 2N2222 (higher current rating)
Always verify the specifications for the specific application, including voltage, current, and gain characteristics.

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