LM5112SD/NOPB

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LM5112SD/NOPB

IC GATE DRVR LOW-SIDE 6WSON

  • Fabricante
  • Mfr. Parte #LM5112SD/NOPB
  • Paquete WSON (NGG)-6
  • Hoja de datos
  • En stock2016

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Especificaciones

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
DrivenConfiguration Low-Side
ChannelType Single
NumberofDrivers 1
GateType N-Channel MOSFET
Voltage-Supply 3.5V ~ 14V
LogicVoltage-VILVIH 0.8V, 2.3V
Current-PeakOutput(SourceSink) 3A, 7A
InputType Inverting, Non-Inverting
Rise/FallTime(Typ) 14ns, 12ns
OperatingTemperature -40°C ~ 125°C (TJ)
MountingType Surface Mount
Package/Case 6-WDFN Exposed Pad

Descripción general

Description

LM5112SD/NOPB is Texas Instruments’ dual gate driver that provides both high-side and low-side MOSFET drive for a half-bridge.
Key points:
- Dual gate-driver: drives two N-channel MOSFETs (one high-side, one low-side) using bootstrap for the high-side.
- Inputs/outputs: two control inputs and two outputs (driving HO and LO gates) for fast switching.
- Typical use: in switch-mode power supplies (buck/boost/buck-boost), motor drivers, and Class D/audio amplifiers.
- Features (typical): fast turn-on/turn-off, suitable drive current for MOSFETs, undervoltage lockout, and protections to prevent shoot-through.
- Packaging suffix: SD refers to a specific package variant; NOPB means No Lead (Pb-free) RoHS-compliant.
Note: exact electrical specs (supply range, propagation delays, drive strength) vary by variant; consult the TI datasheet for your exact conditions and application notes.

Features

Concise features of LM5112SD/NOPB:
- Dual gate drivers for N-channel MOSFETs: separate high-side (HO) and low-side (LO) outputs with independent inputs.
- Bootstrap high-side drive: uses a bootstrap capacitor to drive the high-side MOSFET.
- Independent input controls: HIN and LIN with an optional enable/shutdown control.
- Undervoltage lockout (UVLO): on both VCC and VB/VS rails to ensure safe operation and prevent false turn-on.
- Turn-on/turn-off speed: fast, able to rapidly charge/discharge gate capacitances for efficient switching.
- Cross-conduction protection: protects against shoot-through between high- and low-side transistors (often with dead-time considerations).
- Robust operation in half-bridge configurations for DC-DC converters, motor drives, and certian power-supply topologies.
- Pb-free (NOPB) packaging; RoHS compliant.
Note: Exact electrical specs (voltage range, output current, propagation delays) vary by device version and package; refer to the datasheet for precise numbers.

Package

LM5112SD/NOPB is in a 16‑pin small-outline package (SOIC‑16), RoHS lead-free (NOPB).

Pinout

Pin count: 8 pins (LM5112SD/NOPB in an 8‑pin package).
Function: Dual high-speed gate driver for a half-bridge. Provides HO (high-side) and LO (low-side) outputs to drive MOSFET gates, using a bootstrap supply (VB) referenced to VS for the high-side. Logic inputs/control: IN (and SD for shutdown). Power pins: VCC (logic supply) and GND. Typical pins: IN, SD, VCC, GND, HO, LO, VB, VS.

Manufacturer

- Manufacturer: Texas Instruments (TI)
- What kind of company: An American multinational semiconductor company that designs and manufactures analog, power management, and embedded processing integrated circuits.

Application

LM5112SD/NOPB is a dual high-side/low-side MOSFET gate driver. Applications include:
- Driving N-channel MOSFETs in synchronous buck/boost and other DC-DC converters
- Half-bridge power stages and motor-drive/solenoid drivers
- Automotive and industrial power electronics
- Class-D audio and other fast-switching power stages requiring ~2 A peak gate drive with bootstrap high-side supply

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