LM5109BSD/NOPB

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LM5109BSD/NOPB

IC GATE DRVR HALF-BRIDGE 8WSON

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  • Mfr. Parte #LM5109BSD/NOPB
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Especificaciones

Part Status Active
DigiKey Programmable Not Verified
Driven Configuration Half-Bridge
Channel Type Independent
Number of Drivers 2
Gate Type MOSFET (N-Channel)
Voltage - Supply 8V ~ 14V
Logic Voltage - VIL, VIH 0.8V, 2.2V
Current - Peak Output (Source, Sink) 1A, 1A
Input Type Non-Inverting
Rise / Fall Time (Typ) 15ns, 15ns
Operating Temperature -40°C ~ 125°C (TJ)
Mounting Type Surface Mount
Package / Case 8-WDFN Exposed Pad
Supplier Device Package 8-WSON (4x4)
Base Product Number LM5109
High Side Voltage - Max (Bootstrap) 108 V

Descripción general

Description

The LM5109BSD/NOPB is a high-performance, high-side and low-side gate driver developed by Texas Instruments. It is used primarily in power management applications to drive N-channel MOSFETs in a half-bridge configuration. This driver is designed to work with supply voltages up to 100 V and provides fast switching times with a propagation delay of typically 30 ns, making it suitable for high-frequency applications.
The LM5109BSD/NOPB features include independent high-side and low-side gate drive inputs, under-voltage lockout (UVLO) for both high and low-side drivers, and a small footprint suitable for space-constrained designs. It comes in a compact 8-pin WSON package, which helps to minimize the parasitic inductances and improve thermal performance. The driver is often used in various applications, including motor drives, power supplies, and DC-DC converters, where efficient and reliable MOSFET switching is critical.

Features

The LM5109BSD/NOPB is a high-voltage gate driver designed for driving N-channel MOSFETs in a half-bridge configuration. It features a floating top driver, which is capable of operating with a supply voltage up to 100 volts. Key features include a bootstrap diode integrated into the driver, which simplifies the design and reduces the number of external components. It has a typical propagation delay of 30 ns, ensuring fast switching speeds, and is capable of providing a peak source and sink current of 1.2 A, making it suitable for driving large gate charge MOSFETs.
The device also includes under-voltage lockout (UVLO) protection for both high-side and low-side drivers, enhancing system reliability by preventing operation under insufficient supply voltage conditions. The LM5109BSD/NOPB is housed in a small, thermally efficient WSON-10 package, improving thermal performance and allowing for compact PCB designs. The device is optimized for power management applications, including DC-DC converters, motor control, and synchronous rectification in power supplies. Its robust design and features provide designers with a reliable solution for high-voltage, high-speed switching applications.

Package

The LM5109BSD/NOPB is typically available in a WSON (Wafer Level Small Outline No-lead) package. This package type is compact and thermally efficient, making it suitable for high-density circuit board designs.

Pinout

The LM5109BSD/NOPB is a high-voltage gate driver IC designed for driving N-channel MOSFETs or IGBTs in a half-bridge configuration. This device typically comes in a small outline package with an 8-pin WSON (Wettable Flank No-Lead) configuration.
Here is a concise description of its pin functions:
1. HB (High-Side Bootstrap Supply): Provides the bootstrap voltage for the high-side driver.
2. HO (High-Side Output): Gate drive output for the high-side MOSFET.
3. HS (High-Side Source/Bootstrap Return): Connects to the source of the high-side MOSFET.
4. HI (High-Side Input): Logic input for controlling the high-side gate driver.
5. LI (Low-Side Input): Logic input for controlling the low-side gate driver.
6. VDD (Supply Voltage): Provides the power supply for the low-side gate driver and control logic.
7. LO (Low-Side Output): Gate drive output for the low-side MOSFET.
8. VSS (Ground): Reference ground for the VDD supply voltage and logic inputs.
These pins enable the IC to control the switching of power transistors efficiently in high-voltage applications.

Manufacturer

The LM5109BSD/NOPB is manufactured by Texas Instruments (TI). Texas Instruments is an American technology company that designs and manufactures semiconductors and various integrated circuits, which they sell to electronics designers and manufacturers globally. TI is particularly known for its analog chips and embedded processors, which are used in a wide range of electronic devices, including industrial and automotive applications, personal electronics, and communications equipment. The company is one of the top semiconductor manufacturers in the world, recognized for its innovation and extensive product portfolio.

Application

The LM5109BSD/NOPB is a high-voltage gate driver designed for driving N-channel MOSFETs in a half-bridge configuration. Its primary application areas include power converters, such as DC-DC converters and AC-DC power supplies, motor drive circuits, and Class-D audio amplifiers. It is particularly suitable for use in high-frequency, high-efficiency power conversion systems, where it provides fast switching, level shifting, and reliable gate driving capabilities.

Equivalent

The LM5109BSD/NOPB is a half-bridge gate driver from Texas Instruments. Equivalent products can include:
1. IR2110 from Infineon Technologies
2. FAN7390 from ON Semiconductor
3. ADuM3223 from Analog Devices
4. MIC4609 from Microchip Technology
These devices are similar in functionality, providing high-side and low-side gate drive for MOSFETs or IGBTs. Always check the specific requirements and datasheets to ensure compatibility with your application.

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