L9013RLT1G

Las imágenes son solo para referencia

L9013RLT1G

Switching Controllers

  • Fabricante
  • Mfr. Parte #L9013RLT1G
  • Paquete
  • Hoja de datos
  • En stock22446

100% original & Nuevo

24 horas listos para el envío

Garantía de 365 días

RFQ y Obtenga más descuentos

Especificaciones

Descripción general

Description

The L9013RLT1G is a dual N-channel MOSFET specifically designed for low-voltage applications. With a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) of up to 7.5A, it is suitable for power management and signal switching in consumer electronics, automotive, and industrial applications.
The device features a low on-resistance (RDS(on)) of approximately 0.045Ω at a gate-source voltage (VGS) of 10V, enhancing efficiency by minimizing power loss during operation. The L9013RLT1G is packaged in a compact SOT-23 form factor, making it ideal for space-constrained designs. Its fast switching capabilities allow for quick response times, making it effective in high-frequency applications.
This MOSFET is also characterized by its high thermal stability, ensuring reliable performance under varying temperature conditions. Overall, the L9013RLT1G is a versatile component for engineers looking to optimize power efficiency in their designs.

Features

The L9013RLT1G is a high-performance N-channel MOSFET, designed for low-voltage applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for various low-voltage applications.
2. Current Capacity: The device can handle continuous drain current (I_D) up to 15A, allowing it to manage substantial power loads.
3. On-Resistance: It features a low R_DS(on) value, typically around 10mΩ at V_GS = 10V, which minimizes power loss during operation.
4. Fast Switching: The MOSFET is designed for quick switching, enhancing efficiency in applications such as switching regulators and motor drivers.
5. Package Type: It comes in a compact SOT-223 package, facilitating easy integration into circuit designs while saving board space.
6. Gate-Source Voltage: With a maximum V_GS of ±20V, it provides flexibility in gate drive configurations.
Overall, the L9013RLT1G is ideal for applications requiring efficient switching and high current handling in a space-saving package.

Package

The L9013RLT1G is packaged in a SOT-23 (Small Outline Transistor) package type. This surface-mount package is compact, allowing for efficient use of space on printed circuit boards.

Pinout

The L9013RLT1G is a dual N-channel MOSFET in a surface-mount package (SOT-23). It has a total of 6 pins. The pin configuration is as follows:
1. Gate 1: Controls the first N-channel MOSFET.
2. Source 1: Connects to the source terminal of the first MOSFET.
3. Drain 1: Connects to the drain terminal of the first MOSFET.
4. Gate 2: Controls the second N-channel MOSFET.
5. Source 2: Connects to the source terminal of the second MOSFET.
6. Drain 2: Connects to the drain terminal of the second MOSFET.
The L9013RLT1G is designed for low voltage and high-speed switching applications, making it suitable for various electronic devices, including power management circuits and signal switching.

Manufacturer

The L9013RLT1G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in designing and manufacturing a wide range of electronic components, including analog, digital, and mixed-signal semiconductors. Their products are widely used in various applications, such as automotive, industrial, consumer electronics, and communications. The company focuses on energy-efficient solutions and has a strong presence in the market, providing innovative technologies aimed at improving the performance and efficiency of electronic systems.

Application

The L9013RLT1G is a high-speed switching NPN transistor commonly used in applications such as signal amplification, switching regulators, and digital circuits. It is particularly suitable for low-power applications, including consumer electronics, audio devices, and motor drivers. Its compact package and efficiency make it ideal for compact designs in mobile devices and other electronic equipment.

Equivalent

The L9013RLT1G is a dual N-channel MOSFET. Equivalent products include the 2N7000, BS170, and SI2302. These alternatives may vary in specifications, so it's essential to check parameters like voltage, current rating, and package type before replacement.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

Similar