KGF25N120KDA

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KGF25N120KDA

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Especificaciones

Manufacturer KEC Semicon
Package TO-247-3

Descripción general

Description

The KGF25N120KDA is a high-voltage MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It typically features a voltage rating of 1200V and a current rating of 25A, making it suitable for switching high voltages in various electronic circuits. This device is commonly used in applications such as power supplies, motor drives, and renewable energy systems.
Key specifications often include low on-resistance, fast switching capabilities, and high thermal stability, which enhance overall efficiency and performance in power conversion applications. The KGF25N120KDA is designed to operate in harsh environments, providing reliability in demanding electrical conditions.
Furthermore, it may come in different package types, facilitating easy integration into circuit designs. When selecting this MOSFET, engineers should consider factors like gate voltage, thermal management, and switching frequency to ensure optimal performance in their specific applications.

Features

The KGF25N120KDA is a high-voltage N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 1200V, making it suitable for high-voltage applications.
2. Continuous Drain Current: Offers a continuous drain current (I_D) capability of 25A at 25°C, allowing for substantial load handling.
3. Low Gate Threshold Voltage: Has a low gate threshold voltage (V_GS(th)), facilitating easy drive and efficient switching.
4. R_DS(on): Provides low on-resistance, enhancing efficiency and reducing power loss during operation.
5. Package Type: Comes in a TO-247 package, which aids in heat dissipation and makes it easier to integrate into various designs.
6. Fast Switching Speed: Features fast switching capabilities, beneficial for applications in inverters, converters, and other power management systems.
Overall, the KGF25N120KDA is ideal for use in high-efficiency power electronics, renewable energy systems, and industrial applications.

Package

The KGF25N120KDA is typically housed in a TO-247 package type. This package is designed for high-power applications, offering excellent thermal performance and electrical insulation.

Pinout

The KGF25N120KDA is a high-voltage N-channel MOSFET with a pin count of 4. Its primary functions include switching and amplification in power electronics applications. The pin configuration typically includes the following:
1. Gate (G) - Controls the MOSFET operation by turning it on or off.
2. Drain (D) - The output terminal where the load is connected; current flows from the drain to the source when the MOSFET is on.
3. Source (S) - The terminal connected to the ground or negative supply; current flows into the source when the MOSFET is on.
4. Body (B) - Internal connection, generally tied to the source.
This MOSFET is rated for a maximum voltage of 1200V and a continuous drain current of 25A, making it suitable for applications in power supplies, converters, and motor drives. Always refer to the specific datasheet for detailed electrical characteristics and thermal performance.

Manufacturer

The KGF25N120KDA is manufactured by Infineon Technologies, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in providing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors, catering to various industries such as automotive, industrial, and consumer electronics. The company is known for its focus on innovation and sustainability, offering products that enhance energy efficiency and performance in electronic applications.

Application

The KGF25N120KDA is a high-voltage IGBT (Insulated Gate Bipolar Transistor) used primarily in industrial applications such as motor drives, power inverters, and renewable energy systems like solar inverters. It is also suitable for applications in welding equipment, UPS systems, and other high-efficiency power conversion devices due to its ability to handle high voltage and current levels efficiently. Its fast switching capabilities make it ideal for switching power supplies and converters.

Equivalent

The KGF25N120KDA is an N-channel MOSFET. Equivalent products include:
1. IXFH25N120
2. STP25N120
3. FQA25N120
4. IRF250
5. P25N120
Always verify specifications such as voltage, current, and Rds(on) when selecting substitutes.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

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Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

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