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K9F4G08U0B-PCB0
- Fabricante
- Mfr. Parte #K9F4G08U0B-PCB0
- Paquete
- Hoja de datos
- En stock18923
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Especificaciones
| Manufacturer | Samsung Electro-Mechanics |
| Package | TSOP-48-12mm |
Descripción general
Description
This NAND chip incorporates a low-power design, enhancing energy efficiency and prolonging battery life in mobile devices. It utilizes a multi-level cell (MLC) architecture, allowing it to store more than one bit of data per cell, which increases its storage density.
The K9F4G08U0B-PCB0 is characterized by its high-speed read and write operations, making it ideal for applications that demand quick data access. Additionally, it supports a range of interfaces, ensuring compatibility with various system architectures. Overall, this NAND flash memory is critical for enhancing the performance and reliability of modern electronic devices.
Features
1. Density: 4Gb (Gigabits) capacity, suitable for various applications.
2. Interface: On-chip asynchronous interface, supporting multiple I/O operations for efficient data transfer.
3. Architecture: Multilevel cell (MLC) technology, allowing multiple bits per cell to increase storage density.
4. Read/Write Speed: Optimized for high-speed read and write operations, enhancing performance in data-intensive applications.
5. Endurance: Supports a specified number of program/erase cycles, typically around 10,000 or more, making it suitable for consumer and industrial applications.
6. Power Consumption: Low power operation, contributing to energy efficiency in portable devices.
7. Package: Available in a small form-factor package, facilitating integration into various electronic designs.
This device is commonly used in mobile devices, USB drives, and other embedded systems requiring reliable storage solutions.
Package
Pinout
The primary functions of these pins include:
1. Data I/O Pins (DQ0-DQ7): 8 pins for data input and output.
2. Address Pins (A0-A18): 19 pins used for addressing memory locations.
3. Control Pins:
- CE# (Chip Enable): Activates the chip.
- WE# (Write Enable): Initiates write operations.
- RE# (Read Enable): Initiates read operations.
- OE# (Output Enable): Controls data output.
4. WP# (Write Protect): Protects data from being erased or overwritten.
5. R/B (Ready/Busy): Indicates the status of read/write operations.
6. VCC: Power supply pin.
7. GND: Ground pin.
This device is typically used in applications requiring non-volatile storage, such as SSDs and mobile devices.
Manufacturer
Application
Equivalent
1. Micron MT29F4G08ABAEAWP
2. Toshiba TC58NVG4D1HBAI4
3. Samsung K9F4G08U0A
It's important to verify specific characteristics like package type, voltage, and memory architecture when considering alternatives.
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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