K4F8E304HB-MGCJ

Las imágenes son solo para referencia

K4F8E304HB-MGCJ

LPDDR4 8Gb x32 3733 Mbps 1.1v 20

  • Fabricante
  • Mfr. Parte #K4F8E304HB-MGCJ
  • Paquete
  • Hoja de datos
  • En stock24740

100% original & Nuevo

24 horas listos para el envío

Garantía de 365 días

RFQ y Obtenga más descuentos

Especificaciones

Part Status Active
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Memory Size 8Gbit
Memory Organization 256M x 32
Memory Interface Parallel
Clock Frequency 1866 MHz
Voltage - Supply 1.1V
Operating Temperature -25°C ~ 85°C
Mounting Type Surface Mount
Package 200-TFBGA
Packaging Tray

Descripción general

Description

The K4F8E304HB-MGCJ is a mobile DRAM (Dynamic Random Access Memory) chip produced by Samsung. It features a 512MB capacity and is based on the DDR (Double Data Rate) technology, specifically DDR2. This memory component is designed for use in various mobile applications, including smartphones and tablets, offering a balance of performance and energy efficiency.
The MGCJ designation indicates certain specifications regarding speed and timing parameters, catering to the needs of mobile devices. The chip operates at a voltage of 1.8V, which is typical for DDR2 memory, ensuring compatibility with a wide range of mobile platforms.
Key features include high-speed data transfer rates, reduced power consumption, and a compact form factor, making it suitable for space-constrained devices. Overall, the K4F8E304HB-MGCJ serves as a crucial component in enhancing the performance and efficiency of mobile computing devices.

Features

The K4F8E304HB-MGCJ is a 4GB (512MB x 8) DDR3 SDRAM memory chip, commonly used in various electronic applications. Key features include:
1. Density: 4GB capacity, suitable for a range of devices.
2. Organization: 512MB x 8 configuration, allowing for efficient data handling.
3. Memory Type: DDR3 SDRAM, which provides higher speed and lower power consumption compared to its predecessors.
4. Speed: Operates at speeds of up to 1600 MT/s (megatransfers per second), enhancing performance in applications.
5. Voltage: Typically operates at a low voltage of 1.5V, contributing to energy efficiency.
6. Package: Available in a compact package, making it suitable for space-constrained designs.
7. Applications: Ideal for use in laptops, desktops, and embedded systems.
Overall, the K4F8E304HB-MGCJ is designed for high-performance computing with an emphasis on energy efficiency and reliability.

Package

The K4F8E304HB-MGCJ is a DRAM memory chip packaged in a 78-ball FBGA (Fine Ball Grid Array) format.

Pinout

The K4F8E304HB-MGCJ is a 512 Mb (64 MB) DDR3 SDRAM memory chip, specifically designed for high-performance applications. It has a pin count of 78 pins in a TSOP-II (Thin Small Outline Package) configuration.
The primary functions of this memory chip include:
1. Data Storage: It serves as volatile memory for storing data temporarily while a computer or device is operational.
2. Memory Access: It supports high-speed data access with features like burst read/write operations.
3. Power Management: It operates at low power, making it suitable for mobile and battery-operated devices.
4. Bus Interface: The chip interfaces with the memory controller through a DDR (Double Data Rate) bus, allowing for simultaneous data transfer on both rising and falling clock edges.
This combination of features makes it ideal for various applications, including laptops, desktops, and embedded systems.

Manufacturer

The manufacturer of the K4F8E304HB-MGCJ is Samsung Electronics. Samsung is a South Korean multinational conglomerate that operates primarily in the electronics industry, known for its advanced semiconductor technology, consumer electronics, and telecommunications equipment. The company is a leading global supplier of memory chips, including DRAM and NAND flash, which are critical components in various electronic devices such as smartphones, computers, and servers. Samsung’s semiconductor division plays a crucial role in the company’s overall business strategy, contributing significantly to its revenue and innovation in technology.

Application

The K4F8E304HB-MGCJ is a high-density DRAM chip commonly used in consumer electronics, including smartphones, tablets, and laptops. It is also utilized in gaming consoles, embedded systems, and other devices requiring efficient memory solutions. Its applications extend to automotive electronics and industrial computing, where reliable performance and data storage are crucial.

Equivalent

The K4F8E304HB-MGCJ chip is a 512 MB DDR3 SDRAM manufactured by Samsung. Equivalent products include:
1. MT41J256M16HA-125:E (Micron)
2. H5TQ2G83AFR-PBA (Hynix)
3. IS43TR16320D-125B (ISSI)
Check compatibility regarding specifications like speed, voltage, and package type before substitution.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

Similar