K4B4G1646E-BCK0

Las imágenes son solo para referencia

K4B4G1646E-BCK0

  • Fabricante
  • Mfr. Parte #K4B4G1646E-BCK0
  • Paquete
  • Hoja de datos
  • En stock12142

100% original & Nuevo

24 horas listos para el envío

Garantía de 365 días

RFQ y Obtenga más descuentos

Especificaciones

Manufacturer Samsung Electro-Mechanics
Package FBGA-96(7.5x13)

Descripción general

Description

K4B4G1646E-BCK0 is a high-performance DRAM (Dynamic Random Access Memory) chip manufactured by Samsung. It belongs to the DDR3 (Double Data Rate 3) SDRAM family, specifically designed for use in various electronic devices, including computers, servers, and mobile devices.
This memory chip features a 4GB capacity and operates at a data rate of 1600 MT/s (megatransfers per second), making it suitable for applications requiring efficient data processing. It also has a 64-bit data bus, enabling fast data transfer between the memory and the processor.
The chip is ideal for enhancing system performance, providing improved multitasking capabilities and faster load times for applications. Its low power consumption helps to prolong battery life in portable devices.
In summary, K4B4G1646E-BCK0 is a reliable and efficient memory solution that meets the growing demands of modern computing applications.

Features

The K4B4G1646E-BCK0 is a DRAM (Dynamic Random Access Memory) component, specifically a 64-bit DDR3 SDRAM (Synchronous Dynamic Random Access Memory) chip. Key features include:
1. Density: 4 Gb (Gigabits) capacity.
2. Configuration: Organized as 512 Meg x 16 bits.
3. Speed: Operates at a data rate of up to 1600 MT/s (megatransfers per second).
4. Voltage: Typically operates at 1.5V, with low power options available.
5. Package: Offered in a standard FBGA (Fine Ball Grid Array) package for compact design.
6. Functionality: Supports burst lengths of 4 and 8, allowing for efficient data transfer.
7. Applications: Commonly used in memory modules for laptops, desktops, and servers.
This DRAM component is designed for high performance and efficiency, making it suitable for various computing environments.

Package

The K4B4G1646E-BCK0 is a DRAM memory chip packaged in a 78-ball FBGA (Fine Pitch Ball Grid Array) format. This package type is designed for high-density applications, providing efficient space utilization and thermal management.

Pinout

The K4B4G1646E-BCK0 is a DRAM chip from Samsung, specifically a 4Gb (Gigabit) DDR3 SDRAM device. It features a total of 84 pins.
The primary functions of these pins include:
- Data Pins (DQ): Used for the bi-directional data bus.
- Address Pins (A): Used to select memory locations.
- Command Pins (BA, CS, RAS, CAS, WE): Control the read/write operations, command input, and chip selection.
- Clock Pins (CK, CK#): For synchronizing the data transfer.
- Power and Ground Pins (VDD, VSS): Provide the necessary power supply and ground reference.
- Other Control Pins: Pins for functions like write enable, output enable, and mode register set.
This chip operates at a voltage of 1.5V and supports data rates up to 1066 Mbps (DDR3-1066).

Manufacturer

The K4B4G1646E-BCK0 is manufactured by Samsung Electronics, a South Korean multinational company. Samsung is one of the largest manufacturers of semiconductors, consumer electronics, and telecommunications equipment globally. The company is well-known for its extensive range of products, including smartphones, televisions, and home appliances, as well as advanced memory chips and integrated circuits. Samsung's semiconductor division, which includes DRAM and NAND flash memory products, plays a crucial role in the company's overall business strategy, contributing significantly to its revenue and technological innovation.

Application

The K4B4G1646E-BCK0 is a 4Gb DDR3 SDRAM memory chip primarily used in applications such as consumer electronics (smartphones, tablets, and laptops), embedded systems, and networking devices. It supports high-speed data transfer and is suitable for various memory-intensive applications including gaming consoles, automotive electronics, and industrial automation. Its low power consumption makes it ideal for portable devices.

Equivalent

The K4B4G1646E-BCK0 chip is a 4Gb DDR3 SDRAM memory chip. Equivalent products include:
1. MT41J256M16HA-125 IT: Micron
2. H5TQ4G63AFR-PBA: Hynix
3. ESRAM K4B4G1646E-BCK0: Samsung
Always verify specifications and compatibility before substitution.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

Similar