K4B4G0846E-BYMA

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K4B4G0846E-BYMA

4Gbit 1.35V 933MHz DDR3 SDRAM FBGA-78 Memory (ICs) RoHS

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Especificaciones

Packaging FBGA-78
Clock Frequency 933MHz
Memory Format DDR3 SDRAM
Memory Size 4Gbit
Operating temperature 0℃~+85℃
Voltage - Supply 1.35V

Descripción general

Description

K4B4G0846E-BYMA is a type of NAND flash memory produced by Samsung. It is designed for use in various electronic devices, including smartphones and tablets, providing a reliable and efficient storage solution. This component typically features a density of 8 gigabits (1 GB) and operates based on advanced flash memory technology, which allows for faster read and write speeds, as well as improved endurance and efficiency compared to older memory types.
NAND flash memory plays a critical role in modern electronics, enabling users to store and retrieve data quickly and effectively. K4B4G0846E-BYMA is specifically suited for applications requiring high performance and low power consumption. It follows industry standards and is compatible with various interfaces, making it a versatile choice for manufacturers looking to enhance the functionality of their products.

Features

The K4B4G0846E-BYMA is a DRAM chip from Samsung, specifically a 4Gb (Gigabit) DDR3 SDRAM memory module. It is designed for high-performance applications and features a 1.5V operating voltage, which is typical for DDR3 technology.
Key features include:
1. Density: 4Gb capacity, suitable for various computing applications.
2. Speed: Supports data rates of up to 1600 MT/s (megatransfers per second).
3. Package Type: Usually offered in a compact FBGA (Fine Ball Grid Array) package for efficient space utilization.
4. Organization: Typically organized in 512M x 8 bits, making it compatible with various memory architectures.
5. Power Management: Low power consumption, which is essential for mobile devices and energy-efficient systems.
6. Thermal Performance: Designed to operate within a specified temperature range, ensuring reliability in various conditions.
This chip is commonly used in laptops, servers, and other computing devices requiring efficient and high-capacity memory solutions.

Package

The K4B4G0846E-BYMA is a DDR3 SDRAM memory chip packaged in a 78-ball Fine Pitch Ball Grid Array (FBGA) format.

Pinout

The K4B4G0846E-BYMA is a 4Gb (gigabit) DDR3 SDRAM memory chip manufactured by Samsung. It comes in a 78-ball FBGA (Fine Ball Grid Array) package. The pin count is 78.
This memory device operates at a voltage of 1.5V and is designed for applications requiring high-speed memory, such as laptops and desktops. It features a data rate of up to 1600 MT/s (megatransfers per second) and supports various memory functions, including burst mode and precharge.
The K4B4G0846E-BYMA integrates multiple internal banks for efficient data access and supports a wide range of memory configurations, making it suitable for various consumer electronics and computing applications.

Manufacturer

The K4B4G0846E-BYMA is manufactured by Samsung Electronics, a South Korean multinational conglomerate. Samsung is a prominent technology company known for its diverse range of products, including semiconductors, consumer electronics, and telecommunications equipment. The company is one of the largest manufacturers of memory chips globally, producing DRAM, NAND flash, and other memory solutions. Samsung Electronics plays a significant role in the global technology supply chain, catering to various industries, including computing, mobile devices, and automotive. The K4B4G0846E-BYMA is a specific type of DRAM memory module commonly used in electronic devices for data storage and processing.

Application

The K4B4G0846E-BYMA is a 4Gb DDR3 SDRAM memory chip commonly used in applications such as consumer electronics, laptops, desktops, servers, and networking devices. It serves functions in high-performance computing, graphics processing, and data-intensive applications, providing efficient memory solutions for improved speed and multitasking capabilities.

Equivalent

The K4B4G0846E-BYMA chip is a 4Gb DDR3 SDRAM memory device. Equivalent products include:
1. MT41J256M16HA-125
2. Hynix H5TQ4G63AFR
3. Nanya NT5CB256M8HA
Always verify compatibility with your specific application and requirements.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

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