K4B2G1646F-BCK0

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K4B2G1646F-BCK0

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Especificaciones

EU RoHS Compliant
ECCN (US) EAR99
Part Status Obsolete
HTS 8542.32.00.36
Automotive No
PPAP No
Chip Density (bit) 2G
Number of Bits/Word (bit) 16
Interface Type SSTL_1.5
Minimum Operating Supply Voltage (V) 1.425
Typical Operating Supply Voltage (V) 1.5
Maximum Operating Supply Voltage (V) 1.575
Operating Current (mA) 118
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 95
Mounting Surface Mount
Package Width 7.5
Package Length 13.3
PCB changed 96
Standard Package Name BGA
Supplier Package FBGA
Pin Count 96
Lead Shape Ball
DRAM Type DDR3 SDRAM
Organization 128Mx16
Number of Internal Banks 8
Number of Words per Bank 16M
Data Bus Width (bit) 16
Maximum Clock Rate (MHz) 1600
Maximum Access Time (ns) 0.225
Address Bus Width (bit) 17
Number of I/O Lines (bit) 16

Descripción general

Description

The K4B2G1646F-BCK0 is a type of DRAM (Dynamic Random Access Memory) produced by Samsung. It is a 2GB DDR3 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) module, commonly used in various electronic devices such as laptops, desktops, and servers.
Key specifications include a 1.5V operating voltage, clock speeds typically around 1600 MHz, and a capacity of 2 gigabits (2GB). The "B" in the part number indicates it is a BGA (Ball Grid Array) package, which is characterized by its compact size and efficient thermal management.
This memory chip is designed for high performance and low power consumption, making it suitable for applications requiring quick data access and processing. It follows industry standards for compatibility with various motherboards and systems. Overall, the K4B2G1646F-BCK0 is a reliable choice for enhancing memory capacity in compatible devices.

Features

The K4B2G1646F-BCK0 is a 2GB DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) chip designed for various applications, including mobile devices and computers. Key features include:
1. Memory Type: DDR3 SDRAM, which offers improved speed and efficiency over its predecessor, DDR2.
2. Capacity: 2GB, suitable for a range of computing tasks.
3. Speed: Operates at a data rate of 1600 MT/s (megatransfers per second), ensuring fast data access.
4. Interface: 64-bit wide data bus, facilitating efficient data transfer.
5. Voltage: Typically operates at 1.5V, which helps reduce power consumption.
6. Package Type: Available in a small form factor, suitable for compact devices.
7. Applications: Commonly used in laptops, tablets, smartphones, and other electronic devices requiring reliable and high-speed memory.
Overall, the K4B2G1646F-BCK0 combines high performance with low power usage, making it ideal for modern electronics.

Package

The K4B2G1646F-BCK0 is a DDR3 SDRAM memory chip packaged in a 78-ball FBGA (Fine Ball Grid Array) format.

Pinout

The K4B2G1646F-BCK0 is a 2Gb DDR3 SDRAM memory chip produced by Samsung. It has a pin count of 78, typical for a DDR3 SO-DIMM (Small Outline Dual In-line Memory Module) package.
The primary functions of this memory chip include serving as volatile storage for data and instructions in computing devices, enabling high-speed data access and processing. It operates at a clock frequency of 800 MHz with a data rate of 1600 MT/s, supporting a 64-bit data bus. The device features various functions such as bank switching, refresh cycles, and burst access modes, which enhance performance and efficiency in applications like laptops, desktops, and servers.

Manufacturer

The K4B2G1646F-BCK0 is manufactured by Samsung Electronics. Samsung is a South Korean multinational conglomerate headquartered in Suwon, South Korea. Founded in 1938, it is one of the world's largest technology companies, known for its diverse business segments, including consumer electronics, semiconductors, telecommunications, and home appliances. Samsung Semiconductor, a division of Samsung Electronics, is a leading producer of memory chips, including DRAM and NAND flash, and is a key player in the global semiconductor market. The K4B2G1646F-BCK0 is a type of DDR3 SDRAM memory chip, commonly used in various electronic devices such as computers, smartphones, and tablets.

Application

The K4B2G1646F-BCK0 is a DDR2 SDRAM memory chip used in various applications, including laptops, desktops, and embedded systems. It is suitable for consumer electronics, telecommunications, and industrial equipment. Its high-density and low power consumption make it ideal for applications requiring efficient data storage and processing, such as gaming consoles and multimedia devices.

Equivalent

The K4B2G1646F-BCK0 chip is a 2GB DDR3 SDRAM memory module. Equivalent products include:
1. Hynix H5TQ2G83AFR
2. Micron MT8JSF12864HZ-1G4B1
3. Samsung K4B2G1646F-BCK0 (same model)
4. Nanya NT2GC64B88D3
Always verify compatibility with your specific hardware requirements before substitution.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

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