K4B1G1646I-BCNB

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K4B1G1646I-BCNB

1Gbit 1.5V 1.066GHz DDR3 SDRAM FBGA-96 Memory (ICs) RoHS

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Especificaciones

Packaging FBGA-96
Clock Frequency 1.066GHz
Memory Format DDR3 SDRAM
Memory Size 1Gbit
Operating temperature 0℃~+85℃
Voltage - Supply 1.5V

Descripción general

Description

K4B1G1646I-BCNB is a specific model of DRAM (Dynamic Random-Access Memory) chip produced by Samsung. This type of memory is typically used in various electronic devices, including smartphones, tablets, and computers, to provide fast and efficient data processing capabilities.
The alphanumeric code represents specific characteristics of the chip, such as its capacity, speed, and configuration. Specifically, the 'K4B1G' prefix indicates a 1GB (Gigabit) capacity, while the '1646' refers to its speed and timing characteristics. The suffix 'I-BCNB' often denotes the manufacturing process and other technical specifications.
Overall, K4B1G1646I-BCNB is part of Samsung's efforts to supply high-performance memory solutions to meet the growing demands of modern computing and mobile applications. Its design is optimized for efficiency and reliability in various technological environments.

Features

The K4B1G1646I-BCNB is a 1GB DDR2 SDRAM (Synchronous Dynamic Random Access Memory) chip. Key features include:
1. Density: 1GB capacity, suitable for various applications.
2. Type: DDR2, which offers improvements over DDR in terms of speed and energy efficiency.
3. Speed: Operates at a clock frequency of 400 MHz, providing a data transfer rate of up to 800 MT/s (megatransfers per second).
4. Package: Typically available in a 60-ball BGA (Ball Grid Array) package, ensuring a compact design.
5. Voltage: Operates at 1.8V, which helps in reducing power consumption compared to earlier DDR technologies.
6. Organization: It features a x8 organization, meaning it has eight data bits per memory access, enhancing compatibility with various memory controllers.
7. Application: Commonly used in laptops, desktops, and other consumer electronics requiring efficient memory solutions.
This combination of features makes the K4B1G1646I-BCNB suitable for performance-oriented applications while maintaining power efficiency.

Package

The K4B1G1646I-BCNB is a DDR3 SDRAM memory chip packaged in a 78-ball BGA (Ball Grid Array) format.

Pinout

The K4B1G1646I-BCNB is a DRAM chip from Samsung, specifically a 1Gb DDR3 SDRAM. It features a total of 78 pins. This memory device operates at a voltage of 1.5V and supports data rates of up to 1600 MT/s.
The primary functions of the K4B1G1646I-BCNB include data storage and retrieval in various computing applications, such as laptops, desktops, and servers. The chip operates in a synchronous dynamic random-access memory (SDRAM) mode, allowing for efficient data access aligned with the system clock. It also supports features like burst mode, which enhances performance by allowing multiple data transfers in a single operation. Overall, this DRAM component is crucial for enhancing system memory performance and efficiency.

Manufacturer

The K4B1G1646I-BCNB is manufactured by Samsung Electronics, a South Korean multinational conglomerate. Samsung is renowned for its diverse range of products, including consumer electronics, semiconductors, telecommunications equipment, and more. The company is one of the largest manufacturers of memory chips globally, producing DRAM, NAND flash, and other semiconductor components. Founded in 1938, Samsung has grown to become a leader in technology innovation and manufacturing, playing a significant role in the global electronics market.

Application

The K4B1G1646I-BCNB is a 1GB DDR3 SDRAM memory module primarily used in various applications such as consumer electronics, computers, tablets, and other embedded systems. It serves in devices requiring high-speed data processing, such as laptops, smartphones, and networking equipment. Additionally, it is suitable for automotive applications and industrial control systems that demand reliable performance and efficiency.

Equivalent

The K4B1G1646I-BCNB chip is a 1Gb DDR3 SDRAM memory chip. Equivalent products include:
1. MT41J128M16HA-15E
2. H5TQ1G83CFR-PBA
3. IS43TR16128BL-125B3
4. AS4C1G16D3LA-12BCN
Ensure to check the specific datasheets for compatibility in terms of pin configuration, voltage, and timing parameters.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

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