K4B1G1646G-BCK0

Las imágenes son solo para referencia

K4B1G1646G-BCK0

  • Fabricante
  • Mfr. Parte #K4B1G1646G-BCK0
  • Paquete
  • Hoja de datos
  • En stock18017

100% original & Nuevo

24 horas listos para el envío

Garantía de 365 días

RFQ y Obtenga más descuentos

Especificaciones

Manufacturer Samsung
Package BGA96-7.5x13.3-0.8mm

Descripción general

Description

K4B1G1646G-BCK0 is a type of DRAM (Dynamic Random Access Memory) chip produced by Samsung. Specifically, it is a 1Gb (gigabit) DDR3 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) component designed for high-performance applications. This memory type is widely used in various electronic devices, including computers, smartphones, and embedded systems.
The chip operates at a voltage of 1.5V and supports data rates of up to 1600 MT/s (megatransfers per second), making it suitable for applications requiring efficient memory processing. It typically comes in a BGA (Ball Grid Array) package, allowing for compact integration on circuit boards.
K4B1G1646G-BCK0 features a synchronous interface, meaning it coordinates data transfers with the system clock, providing reliable performance and improved bandwidth. Its design adheres to JEDEC standards, ensuring compatibility with various hardware. Overall, this DRAM chip is a versatile solution for enhancing memory capacity and speed in modern electronic devices.

Features

The K4B1G1646G-BCK0 is a 1Gb (Gigabit) DRAM chip designed for use in a range of electronic applications, particularly in mobile devices. Key features include:
1. Type: DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic Random Access Memory).
2. Configuration: It is organized as 128M x 16 bits.
3. Speed: Operates at speeds up to 1600 MT/s (mega-transfers per second).
4. Voltage: Typically operates at a supply voltage of 1.5V.
5. Package: Available in a compact FBGA (Fine Ball Grid Array) package, which aids in space-efficient designs.
6. Power Efficiency: Designed for low power consumption, making it suitable for mobile applications.
7. Applications: Commonly used in smartphones, tablets, and other portable devices due to its compact size and efficiency.
These features combine to deliver a high-performance memory solution suitable for modern electronics.

Package

The K4B1G1646G-BCK0 is a DDR3 SDRAM (Synchronous Dynamic Random Access Memory) package type typically comes in a 78-ball FBGA (Fine Ball Grid Array) form factor.

Pinout

The K4B1G1646G-BCK0 is a 1Gb DDR3 SDRAM memory chip, specifically designed for mobile applications. It has a total of 78 pins.
The primary functions of the pins include data input/output (DQ), address inputs (A), command inputs (CK, CK#, CS#, RAS#, CAS#, WE#), power supply (VDD, VDDQ), ground (VSS, VSSQ), and other control signals for proper operation and interfacing with the memory controller. The DQ pins are used for data transfer, while the address pins select the specific memory location to read or write data. The clock pins (CK, CK#) synchronize the data transfer.
This chip operates at a voltage of 1.5V and supports various data rates, making it suitable for high-performance applications in mobile devices.

Manufacturer

The K4B1G1646G-BCK0 is a DRAM memory chip manufactured by Samsung Electronics. Samsung is a South Korean multinational conglomerate known for its diverse range of products and services, including consumer electronics, semiconductors, telecommunications, and more. Founded in 1938, the company is one of the largest producers of electronic components globally and is a key player in the semiconductor industry. Samsung's semiconductor division, which includes memory chips like DRAM and NAND flash, is vital to its business and contributes significantly to its overall revenue. The company's commitment to innovation and technology has established it as a leader in the electronics market.

Application

The K4B1G1646G-BCK0 is a DRAM memory chip primarily used in consumer electronics such as smartphones, tablets, and laptops. Its main applications include mobile devices, embedded systems, and multimedia products, where it supports high-speed data processing and efficient power consumption. Additionally, it can be utilized in automotive applications and industrial equipment requiring reliable memory performance.

Equivalent

The K4B1G1646G-BCK0 is a 1Gb DDR3 SDRAM memory chip. Equivalent products include:
1. Hynix H5TQ1G83AFR
2. Micron MT41J1G8
3. Samsung K4B1G1646E
4. Nanya NT5CB256M8J
5. Winbond W631GU6KB
Always check specifications for compatibility.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

Similar