K4A8G165WG-BCWE

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K4A8G165WG-BCWE

8Gbit 1.2V 3.2GHz DDR4 SDRAM BGA-96 Memory (ICs) RoHS

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  • Mfr. Parte #K4A8G165WG-BCWE
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  • En stock11917

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Especificaciones

Packaging BGA-96
Clock Frequency 3.2GHz
Current - Supply 42mA
Memory Format DDR4 SDRAM
Memory Size 8Gbit
Operating temperature 0℃~+85℃
Refresh Current 20mA
Voltage - Supply 1.2V

Descripción general

Description

K4A8G165WG-BCWE is a type of DRAM chip produced by Samsung, specifically a DDR3 (Double Data Rate 3) SDRAM (Synchronous Dynamic Random Access Memory) module. This specific part number indicates that it is an 8 Gigabit (Gb) memory chip, often used in various electronic devices such as computers, smartphones, and other consumer electronics that require high-speed memory.
Key features of K4A8G165WG-BCWE include its ability to operate at a frequency of up to 1600 MT/s (megatransfers per second), which allows for efficient data processing and quick access times. It typically operates at a voltage of 1.5V. The chip is usually packaged in a compact form to fit into various memory slots and is designed for high-performance applications.
Overall, K4A8G165WG-BCWE is a reliable choice for enhancing system memory, contributing to faster performance and improved multitasking capabilities in devices.

Features

The K4A8G165WG-BCWE is a DRAM memory chip manufactured by Samsung, specifically a DDR4 SDRAM module. Key features include:
- Capacity: 8 GB (gigabytes)
- Type: DDR4 (Double Data Rate 4)
- Data Rate: 2400 MT/s (megatransfers per second), offering high-speed performance suitable for various applications.
- Voltage: Operates at 1.2V, which helps in reducing power consumption compared to earlier DDR generations.
- Organization: Typically organized in a 1024M x 64 configuration.
- Package: Available in a compact 78-ball FBGA (Fine Ball Grid Array) package, facilitating integration into smaller devices.
- Applications: Primarily used in laptops, desktops, and other computing devices for improved multitasking and efficiency.
- Latency: Offers relatively low latency, ensuring quick access to data.
Overall, the K4A8G165WG-BCWE is designed for high-performance computing tasks, enhancing system responsiveness and efficiency.

Package

The K4A8G165WG-BCWE is a DDR4 SDRAM in a 78-ball TFBGA (Thin Fine Ball Grid Array) package type.

Pinout

The K4A8G165WG-BCWE is a DDR4 SDRAM memory chip manufactured by Samsung. It has a pin count of 78 and is packaged in a TFBGA (thin fine-pitch ball grid array) package. The primary function of this memory chip is to serve as a high-performance volatile storage solution commonly used in various computing devices, including laptops, desktops, and servers. It features a density of 8 Gigabits and operates at a data rate of up to 2400 MT/s. This chip is designed for applications requiring efficient data processing and high bandwidth, making it suitable for both consumer electronics and industrial applications.

Manufacturer

The K4A8G165WG-BCWE is manufactured by Samsung Electronics, a subsidiary of the Samsung Group. Founded in 1938, Samsung Electronics is a South Korean multinational company based in Suwon, South Korea, specializing in consumer electronics, semiconductors, telecommunications, and digital media. As one of the world’s largest producers of memory chips, including DRAM and flash memory, Samsung plays a critical role in the global electronics supply chain. The company is also well-known for its wide range of products, including smartphones, tablets, televisions, and home appliances, making it a key player in the technology and electronics industries.

Application

The K4A8G165WG-BCWE is a 1GB DDR3 SDRAM memory chip used in various applications, including mobile devices, tablets, laptops, and embedded systems. It supports high-speed data processing and is ideal for tasks requiring efficient memory performance, such as gaming, multimedia, and data-intensive applications. Its compact design also makes it suitable for space-constrained devices.

Equivalent

The K4A8G165WG-BCWE chip is a 1GB DDR3 SDRAM memory chip. Equivalent products include:
1. Hynix H5TQ2G83AFR - DDR3 1GB
2. Micron MT41K128M16HA - DDR3 1GB
3. Samsung K4B4G083PD - DDR3 1GB
These alternatives should meet similar specifications for applications requiring DDR3 memory. Always confirm compatibility with your specific requirements.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

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