IXYP60N65A5

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IXYP60N65A5

IGBT 650V 60A X5 XPT TO-220

  • Fabricante
  • Mfr. Parte #IXYP60N65A5
  • Paquete TO-220-3
  • Hoja de datos
  • En stock2317

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Especificaciones

Package Tube
Series XPT™, GenX5™
ProductStatus Active
IGBTType PT
Voltage-CollectorEmitterBreakdown(Max) 650 V
Current-Collector(Ic)(Max) 134 A
Current-CollectorPulsed(Icm) 260 A
Vce(on)(Max)@VgeIc 1.35V @ 15V, 36A
Power-Max 395 W
SwitchingEnergy 600µJ (on), 1.45mJ (off)
InputType Standard
GateCharge 128 nC
Td(on/off)@25°C 28ns/230ns
TestCondition 400V, 36A, 5Ohm, 15V
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
Package/Case TO-220-3

Descripción general

Description

The IXYP60N65A5 is a N-channel power MOSFET designed for high-efficiency applications in power management, including industrial and automotive systems. It features a voltage rating of 650V and a continuous drain current of 60A, making it suitable for high-voltage switching applications. With a low on-resistance (R_DS(on)) of around 0.38 ohms, it minimizes conduction losses, enhancing overall system efficiency.
The device is optimized for fast switching, reducing the switching losses in high-frequency applications. Its robust construction allows it to withstand high temperatures and provides excellent thermal performance, making it reliable in demanding environments. The IXYP60N65A5 is housed in a TO-247 package, facilitating easy heat dissipation.
Overall, this MOSFET is ideal for use in applications such as power supplies, motor drives, and converters, where efficiency and performance are critical.

Features

The IXYP60N65A5 is a high-performance N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (Vds) of 650V, making it suitable for high-voltage applications.
2. Current Rating: The maximum continuous drain current (Id) is 60A, allowing it to manage significant loads.
3. RDS(on): It has a low on-resistance (RDS(on)) of approximately 0.29 ohms, which minimizes conduction losses and enhances efficiency.
4. Gate Charge: The total gate charge (Qg) is around 90 nC, facilitating faster switching and reducing drive power.
5. High-Speed Switching: Optimized for fast switching applications, it improves performance in converters and inverters.
6. Thermal Performance: Features a TO-247 package that provides efficient thermal management, suitable for high-temperature environments.
Overall, the IXYP60N65A5 is ideal for applications in industrial power supplies, motor drives, and other high-voltage switching scenarios.

Package

The IXYP60N65A5 is packaged in a TO-247 format, which is a type of power semiconductor package designed for high-voltage applications. This package offers good thermal performance and is suitable for mounting on heatsinks.

Pinout

The IXYP60N65A5 is an N-channel power MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin allows current to flow between the drain and source.

2. Drain (D): This pin is connected to the load. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to ground or the negative side of the power supply. It serves as the return path for the current flowing through the device.
Key specifications include a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of 60A. The IXYP60N65A5 is commonly used in high-voltage applications such as power supplies, motor drives, and inverters.

Manufacturer

The IXYP60N65A5 is manufactured by IXYS Corporation, a company that specializes in power semiconductor technologies. IXYS designs and produces a range of products, including power MOSFETs, IGBTs, and integrated circuits, primarily used in applications such as industrial automation, renewable energy systems, and power conversion. Founded in 1983, IXYS is known for its innovation in high-performance power management solutions. In 2018, IXYS Corporation was acquired by Littelfuse, Inc., further expanding its capabilities in the semiconductor industry.

Application

The IXYP60N65A5 is an N-channel MOSFET typically used in high-efficiency power applications. Key areas include power supplies, motor drives, automotive systems, renewable energy systems (like solar inverters), and industrial automation. Its high voltage and current ratings make it suitable for switching applications, including DC-DC converters and high-frequency applications.

Equivalent

The IXYP60N65A5 is an N-channel MOSFET with a 650V rating and 60A continuous current capability. Equivalent products include the Infineon IPP60R065P6, STMicroelectronics STP60NF65, and ON Semiconductor NTM60N65R. Always verify specifications such as Rds(on), gate charge, and thermal characteristics for compatibility in specific applications.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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