IXTY08N100D2

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IXTY08N100D2

MOSFET N-CH 1000V 800MA TO252

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  • Mfr. Parte #IXTY08N100D2
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Especificaciones

Series Depletion
Part Status Active
Base Product Number IXTY08
FET Type N-Channel, Depletion Mode
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 800mA (Tc)
Rds On (Max) @ Id, Vgs 21Ohm @ 400mA, 0V
Gate Charge (Qg) (Max) @ Vgs 14.6 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 325 pF @ 25 V
Power Dissipation (Max) 60W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging Tube

Descripción general

Description

The IXTY08N100D2 is a high-performance N-channel MOSFET designed for various power applications, particularly in energy-efficient systems. With a voltage rating of 100V and a continuous drain current of 8A, it is suitable for use in switching power supplies, motor drives, and automotive applications.
Key features include low on-resistance (R_DS(on)), which reduces power losses during operation, and fast switching speeds, enhancing overall efficiency. This MOSFET also has a high thermal stability, making it reliable in demanding environments.
The IXTY08N100D2 is packaged in a TO-220 form factor, facilitating easy heat dissipation and integration into circuit designs. As with any semiconductor device, proper handling and thermal management are essential to ensure optimal performance and longevity.
Overall, the IXTY08N100D2 is a versatile component ideal for engineers seeking reliable power management solutions in modern electronic designs.

Features

The IXYT08N100D2 is a high-voltage N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: Capable of withstanding drain-source voltages up to 100V.
2. Current Rating: Supports a continuous drain current of up to 8A, making it suitable for various power applications.
3. RDS(on): Low on-resistance, typically around 0.1 ohms, which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: Designed for low gate threshold voltage, allowing for efficient switching with lower drive voltages.
5. Thermal Performance: Features a robust thermal package, enhancing heat dissipation capabilities, which is critical for high-power applications.
6. Fast Switching Speed: Enables efficient operation in switching applications, reducing switching losses.
7. Applications: Commonly used in DC-DC converters, power supplies, and motor drivers.
Overall, the IXYT08N100D2 is suitable for a range of high-efficiency, high-power electronic circuits.

Package

The IXTY08N100D2 is typically packaged in a TO-247 format. This package type is known for its robust design, suitable for high-power applications, and provides effective thermal management for the device.

Manufacturer

The IXTY08N100D2 is manufactured by IXYS Corporation, a subsidiary of Littelfuse, Inc. IXYS is a semiconductor company known for its innovation in power semiconductors and integrated circuits. They specialize in products for a variety of applications, including power management, renewable energy, industrial automation, and telecommunications. IXYS is recognized for its expertise in high-performance semiconductor devices, particularly in the fields of power MOSFETs, IGBTs, and diodes. Their products are widely utilized in various industries, catering to both commercial and industrial markets.

Application

The IXTY08N100D2 is an N-channel MOSFET primarily used in power management applications. Key areas include power supplies, DC-DC converters, motor drives, and inverter circuits. Its high voltage and current ratings make it suitable for industrial automation, renewable energy systems, and electric vehicles. Additionally, it can be utilized in audio amplifiers and other high-frequency switching applications.

Equivalent

The IXTY08N100D2 is a silicon carbide (SiC) MOSFET. Equivalent products include:
1. C3M0065100K (Cree)
2. STP8NK100Z (STMicroelectronics)
3. MPS2N60 (Infineon)
4. SCT3080KL (SCT)
Ensure to verify specifications like voltage, current ratings, and RDS(on) for exact replacements.

Envío

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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