IXTA3N150HV-TRL

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IXTA3N150HV-TRL

MOSFET N-CH 1500V 3A TO263HV

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  • Mfr. Parte #IXTA3N150HV-TRL
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Especificaciones

Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1500 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7.3Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38.6 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1375 pF @ 25 V
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263HV
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number IXTA3

Descripción general

Description

The IXTA3N150HV-TRL is a high-voltage, high-speed insulated gate bipolar transistor (IGBT) designed for various power electronics applications. It features a voltage rating of 1500 V and a current rating of 3 A, making it suitable for inverter applications, motor drives, and power conversion systems. The device is optimized for efficiency, enabling low switching losses and improved thermal performance.
Key characteristics include fast switching capabilities, low conduction losses, and a robust construction that enhances reliability under demanding conditions. The IXTA3N150HV-TRL is often used in renewable energy systems, such as solar inverters, as well as industrial automation and electric vehicles.
Its compact package design allows for easy integration into circuit boards, facilitating space-saving solutions in electronic designs. Overall, the IXTA3N150HV-TRL offers a combination of performance, efficiency, and reliability, making it a popular choice for engineers and designers in the power electronics field.

Features

The Ixta3N150HV-TRL is a high-voltage, high-efficiency power MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: Operates at a maximum drain-source voltage of 150V, suitable for high-voltage applications.
2. Low On-Resistance (RDS(on)): Offers low resistance to minimize power loss during operation, enhancing efficiency.
3. High-Speed Switching: Designed for fast switching applications, making it ideal for use in power converters and inverters.
4. Thermal Performance: Equipped with good thermal characteristics, allowing for better heat dissipation and reliability in demanding environments.
5. Package Type: Typically available in a compact and efficient package, facilitating space-saving designs in electronic circuits.
6. Gate Threshold Voltage: Features a controlled gate threshold voltage for predictable switching characteristics.
These features make the Ixta3N150HV-TRL suitable for use in industrial, automotive, and renewable energy applications where robust performance is required.

Package

The IXTA3N150HV-TRL is packaged in a TO-247 style, which is a high-power, robust package designed for efficient heat dissipation and ease of mounting in various applications, particularly in power electronics.

Pinout

The IXTA3N150HV-TRL is a high-voltage MOSFET with a total of 8 pins. Its primary functions include acting as a switch in power conversion applications, enabling efficient control of high voltage and high current loads. The device is designed for applications such as power supplies, motor drives, and other high-voltage switching scenarios.
The pin configuration typically includes:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - Connects to the load and carries the output current.
3. Source (S) - Connects to the ground or negative voltage supply.
4. Source/Drain Connection Pins - For improved thermal performance and electrical efficiency.
For precise details and specific applications, it's recommended to consult the manufacturer's datasheet, as it provides comprehensive information regarding electrical characteristics and thermal management.

Manufacturer

The IXTA3N150HV-TRL is manufactured by IXYS Corporation, which is a subsidiary of Littelfuse, Inc. IXYS specializes in power semiconductors and integrated circuits. They design and manufacture a wide range of products, including high-voltage and high-current devices, as well as solutions for renewable energy, industrial, and consumer applications. The company is recognized for its expertise in advanced semiconductor technology and focuses on innovation in power management and control.

Application

The IXTA3N150HV-TRL is a high-voltage, high-speed IGBT (Insulated Gate Bipolar Transistor) suitable for various applications, including renewable energy systems (like solar inverters), industrial motor drives, power supplies, and electric vehicles. Its capabilities make it ideal for applications requiring efficient power conversion and high temperature operation.

Equivalent

The IXTA3N150HV-TRL is a high-voltage, high-speed IGBT (Insulated Gate Bipolar Transistor). Equivalent products include the Infineon IGBT series (e.g., IKW30N120T2), ON Semiconductor MBR series (e.g., MBR30100), and Vishay IGBT (e.g., IGBT200N60). Always check specific datasheets for exact specifications and compatibility.

Envío

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DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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